Perovskite quantum dots (PQDs) show promise in light-emitting diodes (LEDs). However, near-infrared (NIR) LEDs employing PQDs exhibit inferior external quantum efficiency related to the PQD emitting in the visible range. One fundamental issue arises from the PQDs dynamic surface: the ligand loss and ions migration to the interfacial sites serve as quenching centers, resulting in trap-assisted recombination and carrier loss.
View Article and Find Full Text PDFNear-infrared light-emitting diodes (NIR LEDs) based on perovskite quantum dots (QDs) have produced external quantum efficiency (EQE) of ~15 %. However, these high-performance NIR-QLEDs suffer from immediate carrier quenching because of the accumulation of migratable ions at the surface of the QDs. These uncoordinated ions and carriers-if not bound to the nanocrystal surface-serve as centers for exciton quenching and device degradation.
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