Publications by authors named "Zixin Zhen"
Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs.
Micromachines (Basel)
August 2024
Article Synopsis
- This study analyzes the effects of proton irradiation on various types of MIS-HEMT devices, including bilayer dielectrics (SiN/AlO), standard Schottky gate HEMT, and single dielectric layer devices for comparison.
- The bilayer dielectrics MIS-HEMT shows significant advantages due to AlO's higher displacement threshold energy combined with SiN's superior surface passivation, leading to reduced structural and electrical performance degradation post-irradiation.
- Simulations and experiments reveal that the bilayer MIS-HEMT maintains the smallest degradation in threshold voltage and on-current, achieves the highest cut-off frequency, and overall demonstrates the best radiation resilience among the device types tested.