Artificial optoelectronic synapse based on CdSe nanobelt photosensitized MoS transistor with long retention time for neuromorphic application.

Optoelectronic synaptic devices have been regarded as the key component in constructing neuromorphic computing systems. However, the optoelectronic synapses based on conventional 2D transistor are still suffering low photosensitivity and volatile retention behavior, which can affect the recognition accuracy and long-term memory. Here, a novel optoelectronic synaptic device based on surface-state-rich CdSe nanobelt photosensitized 2D MoS transistor is demonstrated.

Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors.

Optoelectronic reconfigurable logic gates are promising candidates to meet the multifunctional and energy-efficient requirements of integrated circuits. However, complex device architectures need more power and hinder multifunctional device applications. Here, we design vertical field-effect transistors (VFET) based on the two-dimensional (2D) graphene/MoS/WSe/graphene van der Waals heterojunction forming ohmic and Schottky contact.

Two-dimensional HfS-ZrS lateral heterojunction FETs with high rectification and photocurrent.

Multifunctional devices are an indispensable choice to fulfil the increasing demand for miniaturized and integrated circuit systems. However, bulk material-based devices encounter the challenge of miniaturized all-in-one systems with multiple functions. In this study, we designed a field effect transistor (FET) based on a monolayer HfS-ZrS lateral heterojunction.

PVA-assisted metal transfer for vertical WSe photodiode with asymmetric van der Waals contacts.

The vertical electronic and optoelectronic devices based on 2D materials have shown great advantages over lateral devices, such as higher current density, faster switch speed, and superior short-channel control. However, it is difficult to fabricate vertical device with conventional metal deposition methods due to the aggressive process usually results in damage to the contact region. Here, we develop a simple and effective metal transfer technique and fabricate p-type and n-type WSe transistors by using metals with different work functions and subsequently create a vertical WSe transistors with a 18-nm-thick channel, which retain good gate coupling effect.

Microwave-assisted hydrothermal synthesis of copper selenides (CuSe) thin films for quantum dots-sensitized solar cells.

In this work, copper selenide (CuSe) thin films were grown on FTO conductive glass substrates using a facile microwave-assisted hydrothermal method. The effects of synthesis parameters such as precursor components and deposition time on the stoichiometry and morphology of the synthesized films were systematically investigated through different techniques including XRD, SEM, and AFM. In order to evaluate the electrochemical catalytic performance of the synthesized copper selenide in electrolyte containing the sulfide/polysulfide redox couple, we assembled liquid-junction quantum dots-sensitized solar cells (QDSSC) using the synthesized copper selenide thin films as counter electrodes and CdSe quantum dots-sensitized mesoporous TiOas photoanodes.

Photovoltaic Field-Effect Photodiodes Based on Double van der Waals Heterojunctions.

High performance photodetectors based on van der Waals heterostructures (vdWHs) are crucial to developing micro-nano-optoelectronic devices. However, reports show that it is difficult to balance fast response and high sensitivity. In this work, we design a photovoltaic field-effect photodiode (PVFED) based on the WSe/MoS/WSe double vdWHs, where the photovoltage that originated from one vdWH modulates the optoelectronic characteristics of another vdWH.

Few-layer InPSe nanoflakes for high detectivity photodetectors.

Metal phosphorus trichalcogenides (MPX) have attracted extensive attention as promising two-dimensional (2D) layered materials in future electronic and optoelectronic devices. Here, for the first time, few-layer InPSe nanoflakes have been successfully exfoliated from home-made high-quality single crystals. The InPSe crystal belongs to the R3 space group, and possesses a weak van der Waals force between the adjacent layers and a direct bandgap of 1.

Fabrication of three-dimensionally ordered macroporous TiO film and its application in quantum dots-sensitized solar cells.

Engineering of TiO photoanode is an important strategy for increasing the photovoltaic conversion efficiency of quantum dots-sensitized solar cells (QDSSCs). In this work, three-dimensional ordered macroporous (3DOM) TiO films are fabricated by the controlled infiltrating-calcination method using the close-packed polystyrene spheres colloidal crystals as templates. The as-prepared macroporous TiO films are then applied as the photoanode in colloidal CdSe QDSSCs.