Optimization of CuO/GaO Heterojunction Diodes for High-Voltage Power Electronics.

This study optimizes the CuO/GaO heterojunction diodes (HJDs) by tailoring the structural parameters of CuO layers. The hole concentration in the sputtered CuO was precisely controlled by adjusting the Ar/O gas ratio. Experimental investigations and TCAD simulations were employed to systematically evaluate the impact of the CuO layer dimension and hole concentration on the electrical performance of HJDs.

Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN Stress-Engineering Technique.

In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiN stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiN passivation contributed to the suppression of Fowler-Nordheim (FN) tunneling. As a result, the gate leakage decreased by more than an order of magnitude, and the breakdown voltage (BV) increased from 44 V to 84 V.