A modified CVD method for the synthesis of monolayer MoSand photoelectric improvement by HfOpassivation.

Molybdenum disulfide (MoS) is an emerging class of new materials with a wide range of potential practical applications. However, the uncontrollability of monolayer MoSsynthesized by traditional chemical vapor deposition method and the low responsivity of MoSphotodetectors limit its further development in the field of photoelectric detection. To achieve controlled growth of monolayer MoSand construct MoSphotodetectors with a high responsivity, we propose a novel single crystal growth strategy of high-quality MoSby controlling the Mo to S vapor ratio near the substrate, and deposit a layer of hafnium oxide (HfO) on the surface of MoSto enhance the performance of the pristine metal-semiconductor-metal structure photodetector.