Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp) as a Metal Precursor.

For advanced Cu interconnect technology, Co films have been widely investigated to serve as the liner and seed layer replacement because of a better wettability to Cu than Ta. In this article, the Co films are grown by plasma-enhanced atomic layer deposition using Co(EtCp) as a precursor, and the influences of process parameters on the characteristics of the Co films are elaborately investigated. The results indicate that the process window is 125-225 °C with a growth rate of ~ 0.