Publications by authors named "Zi-En Ooi"

Excitons are key to the optoelectronic applications of van der Waals semiconductors, with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation remains challenging due to inherent charge neutrality and the additional loss channels induced by electrical doping. We demonstrate the dynamic electrical control of valley polarization in charged excitonic states of monolayer tungsten disulfide, achieving up to a 6-fold increase in the degree of circular polarization under off-resonant excitation.

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One of the most exciting applications of artificial intelligence is automated scientific discovery based on previously amassed data, coupled with restrictions provided by known physical principles, including symmetries and conservation laws. Such automated hypothesis creation and verification can assist scientists in studying complex phenomena, where traditional physical intuition may fail. Here we develop a platform based on a generalized Onsager principle to learn macroscopic dynamical descriptions of arbitrary stochastic dissipative systems directly from observations of their microscopic trajectories.

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In this work, we present an automated platform for trapping and stretching individual micro- and nanoscale objects in solution using electrokinetic forces. The platform can trap objects at the stagnation point of a planar elongational electrokinetic field for long time scales, as demonstrated by the trapping of <100 nm polystyrene beads and DNA molecules for minutes, with a standard deviation in displacement from the trap center <1 μm. This capability enables the stretching of deformable nanoscale objects in a high-throughput fashion, as illustrated by the stretching of more than 400 DNA molecules within ∼4 hours.

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Article Synopsis
  • Two-dimensional (2D) semiconductors offer exciting opportunities for smaller CMOS logic circuits, but their advancement is hindered by the need for better high-dielectric materials.
  • Researchers have developed large-area, liquid-metal-printed ultrathin GaO dielectrics, providing smooth interfaces essential for 2D electronics.
  • These dielectrics exhibit excellent properties like a small equivalent oxide thickness (≈1 nm) and low gate leakage currents, showing promise for future low-power nanoelectronics.
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Defect management strategies are vital for enhancing the performance of perovskite-based optoelectronic devices, such as perovskite-based light-emitting diodes (PeLEDs). As additives can fucntion both as acrystallization modifier and/or defect passivator, a thorough study on the roles of additives is essential, especially for blue emissive Pe-LEDs, where the emission is strictly controlled by the -domain distribution of the Ruddlesden-Popper (RP, LAPbX, where L refers to a bulky cation, while A and X are monovalent cation, and halide anion, respectively) perovskite films. Of the various additives that are available, octyl phosphonic acid (OPA) is of immense interest because of its ability to bind with uncoordinated Pb ( notorious for nonradiative recombination) and therefore passivates them.

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Temperature-dependent transport measurements are performed on the same set of chemical vapor deposition (CVD)-grown WS single- and bilayer devices before and after atomic layer deposition (ALD) of HfO . This isolates the influence of HfO deposition on low-temperature carrier transport and shows that carrier mobility is not charge impurity limited as commonly thought, but due to another important but commonly overlooked factor: interface roughness. This finding is corroborated by circular dichroic photoluminescence spectroscopy, X-ray photoemission spectroscopy, cross-sectional scanning transmission electron microscopy, carrier-transport modeling, and density functional modeling.

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Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress.

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We report transport measurements of dual gated MoS and WSe devices using atomic layer deposition grown AlO as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.

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The temperature dependence of the principal photovoltaic parameters of perovskite photovoltaics is studied. The recombination activation energy is in good agreement with the perovskite's bandgap energy, thereby placing an upper bound on the open-circuit voltage. The photocurrent increases moderately with temperature and remains high at low temperature, reinforcing that the cells are not hindered by insufficient thermally activated mobility or carrier trapping by deep defects.

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Embedding metal nanoparticles in the active layer of organic solar cells has been explored as a route for improving charge carrier generation, with localized field enhancement as a proposed mechanism. However, embedded metal nanoparticles can also act as charge recombination sites. To suppress such recombination, the metal nanoparticles are commonly coated with a thin insulating shell.

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Small-molecule solar-cell performance is highly sensitive to the crystallinity and intermolecular connectivity of the molecules. In order to enhance the crystallinity for the solution-processed small molecule, it is possible to make use of carboxylic acid end-functional groups to drive hydrogen-bonding-induced π-π stacking of conjugated molecules. Herein, we report the synthesis and characterization of quarterthiophenes with carboxylic acid as end groups.

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Measurements of lateral bulk heterojunction (BHJ) devices have recently been reported as a means to characterize charge transport and recombination properties within organic photovoltaic (OPV) materials. These structures allow for the direct measurement of the lateral extents of the space charge regions, potential and electric field profiles, current versus voltage characteristics, and other physical and chemical properties. This article describes numerical simulations that show three different transport regimes present within lateral BHJ devices and two different experimental methods, which verify those findings.

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Scanning confocal photocurrent microscopy has been used to characterize carrier collection efficiency in lateral bulk heterojunction devices. By analyzing the photocurrent mappings within these devices, the lateral extents of the space charge regions has been measured and reported. Modulation via white light bias or increased voltage bias is also shown to increase the size of the space charge regions.

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A new diketopyrrolopyrrole (DPP)-containing donor-acceptor polymer, poly(2,5-bis(2-octyldodecyl)-3,6-di(furan-2-yl)-2,5-dihydro-pyrrolo[3,4-c]pyrrole-1,4-dione-co-thieno[3,2-b]thiophene) (PDBF-co-TT), is synthesized and studied as a semiconductor in organic thin film transistors (OTFTs) and organic photovoltaics (OPVs). High hole mobility of up to 0.53 cm(2) V(-1) s(-1) in bottom-gate, top-contact OTFT devices is achieved owing to the ordered polymer chain packing and favoured chain orientation, strong intermolecular interactions, as well as uniform film morphology of PDBF-co-TT.

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Synopsis of recent research by authors named "Zi-En Ooi"

  • - Zi-En Ooi's recent research focuses on advancing optoelectronic materials and devices, particularly through the electrical control of excitons in two-dimensional materials like tungsten disulfide (WS), which demonstrates significant potential for enhancing valley polarization and manipulating charged excitonic states.
  • - Ooi's work also explores innovative methodologies, such as utilizing deep learning for custom thermodynamics, which allows for improved understanding and automation in the study of complex stochastic dissipative systems in physics.
  • - In addition, Ooi has pioneered techniques in the manipulation of nanomaterials, including developing an automated electrokinetic stretcher capable of efficiently trapping and stretching nanoscale objects, as well as producing ultrathin oxide dielectrics via liquid-metal printing for use in next-generation electronic applications.