Impenetrable Barrier at the Metal-Mott Insulator Junction in Polymorphic 1H and 1T NbSe Lateral Heterostructure.

When a metal makes contact with a band insulator, charge transfer occurs across the interface leading to band bending and a Schottky barrier with rectifying behavior. The nature of metal-Mott insulator junctions, however, is still debated due to challenges in experimental probes of such vertical heterojunctions with buried interfaces. Here, we grow lateral polymorphic heterostructures of single-layer metallic 1H and Mott insulating 1T NbSe by molecular beam epitaxy.

Superconductivity on Edge: Evidence of a One-Dimensional Superconducting Channel at the Edges of Single-Layer FeTeSe Antiferromagnetic Nanoribbons.

How superconductivity emerges from antiferromagnetic ordering is an essential question for Fe-based superconductors. Here, we explore the effect of dimensionality on the interplay between antiferromagnetic ordering and superconductivity by investigating nanoribbons of single-layer FeTeSe films grown on SrTiO(001) substrates by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we find a one-dimensional (1D) superconducting channel 2 nm wide with a of 42 ± 4 K on the edge of FeTeSe ( < 0.

Two-Dimensional Palladium Diselenide with Strong In-Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition.

Two-dimensional (2D) palladium diselenide (PdSe ) has strong interlayer coupling and a puckered pentagonal structure, leading to remarkable layer-dependent electronic structures and highly anisotropic in-plane optical and electronic properties. However, the lack of high-quality, 2D PdSe crystals grown by bottom-up approaches limits the study of their exotic properties and practical applications. In this work, chemical vapor deposition growth of highly crystalline few-layer (≥2 layers) PdSe crystals on various substrates is reported.

Evidence for d-Wave Superconductivity in Single Layer FeSe/SrTiO Probed by Quasiparticle Scattering Off Step Edges.

The de Gennes extrapolation length is a direction dependent measure of the spatial evolution of the pairing gap near the boundary of a superconductor and thus provides a viable means to probe its symmetry. It is expected to be infinite and isotropic for plain s-wave pairing, and finite and anisotropic for d-wave. Here, we synthesize single-layer FeSe films on SrTiO(001) (STO) substrates by molecular beam epitaxy and measure the de Gennes extrapolation length by scanning tunneling microscopy/spectroscopy.