Physical Properties of CaTiO-Modified NaNbO Thin Films.

NaNbO(NN)-based lead-free materials are attracting widespread attention due to their environment-friendly and complex phase transitions, which can satisfy the miniaturization and integration for future electronic components. However, NN materials usually have large remanent polarization and obvious hysteresis, which are not conducive to energy storage. In this work, we investigated the effect of introducing CaTiO((1-)NaNbO-CaTiO) on the physical properties of NN.

A Multistate Non-Volatile Photoelectronic Memory Device Based on Ferroelectric Tunnel Junction with Modulable Visible Light Photoresponse.

Recently, certain ferroelectric tunnel junctions (FTJs) exhibit non-volatile modulations on photoresponse as well as tunneling electroresistance (TER) effects related to ferroelectric polarization states. From the opposite perspective, the corresponding polarization states can be read by detecting the levels of the photocurrent. In this study, we fabricate a novel amorphous selenium (a-Se)/PbZrTiO (PZT)/Nb-doped SrTiO (NSTO) heterojunction, which exhibits a high TER of 3 × 10.

Improved Dual-Polarity Response via Pyro-phototronic Effect for Filterless Visible Light Communication.

Dual-polarity response photodetectors (PDs) take full advantage of the directivity of the photocurrent to identify optical information. The dual-polarity signal ratio, a key parameter that represents the equilibrium degree of responses to different lights, is proposed for the first time. The synchronous enhancement of dual-polarity photocurrents and the amelioration of the dual-polarity signal ratio are beneficial to the practical applications.