Si/Organic Integrated Narrowband Near-Infrared Photodetector.

Spectrally selective narrowband photodetection is critical for near-infrared (NIR) imaging applications, such as for communicationand night-vision utilities. It is a long-standing challenge for detectors based on silicon, to achieve narrowband photodetection without integrating any optical filters. Here, this work demonstrates a NIR nanograting Si/organic (PBDBT-DTBT:BTP-4F) heterojunction photodetector (PD), which for the first time obtains the full-width-at-half-maximum (FWHM) of only 26 nm and fast response of 74 µs at 895 nm.

Ultrafast Charge Transfer 2D MoS /Organic Heterojunction for Sensitive Photodetector.

The 2D MoS with superior optoelectronic properties such as high charge mobility and broadband photoresponse has attracted broad research interests in photodetectors (PD). However, due to the atomic thin layer of 2D MoS , its pure photodetectors usually suffer from inevitable drawbacks such as large dark current, and intrinsically slow response time. Herein, a new organic material BTP-4F with high mobility is successfully stacked with 2D MoS film to form an integrated 2D MoS /organic P-N heterojunction, facilitating efficient charge transfer as well as significantly suppressed dark current.

A Bilayer 2D-WS/Organic-Based Heterojunction for High-Performance Photodetectors.

Two-dimensional (2D) tungsten disulfide (WS) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors. However, chemical vapor deposition (CVD) grown 2D WS domains with the coexistence of a discontinuous single layer and multilayers are still not suitable for the fabrication of photodetectors on a large scale. An emerging field in the integration of organic materials with 2D materials offers the advantages of molecular diversity and flexibility to provide an exciting aspect on high-performance device applications.

CVD controlled growth of large-scale WS monolayers.

Monolayer tungsten disulfide (WS) with a direct band gap of 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics. However, it remains challenging to successfully prepare monolayer WS.

ZnO-Controlled Growth of Monolayer WS through Chemical Vapor Deposition.

Monolayer tungsten disulfide (2D WS) films have attracted tremendous interest due to their unique electronic and optoelectronic properties. However, the controlled growth of monolayer WS is still challenging. In this paper, we report a novel method to grow WS through chemical vapor deposition (CVD) with ZnO crystalline whisker as a growth promoter, where partially evaporated WS reacts with ZnO to form ZnWO by-product.