ACS Appl Mater Interfaces
April 2018
Silicon (Si)/organic heterojunction solar cells based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and n-type Si have attracted wide interests because they promise cost-effectiveness and high-efficiency. However, the limited conductivity of PEDOT:PSS leads to an inefficient hole transport efficiency for the heterojunction device. Therefore, a high dense top-contact metal grid electrode is required to assure the efficient charge collection efficiency.
View Article and Find Full Text PDFSolar cell generates electrical energy from light one via pulling excited carrier away under built-in asymmetry. Doped semiconductor with antireflection layer is general strategy to achieve this including crystalline silicon (c-Si) solar cell. However, loss of extra energy beyond band gap and light reflection in particular wavelength range is known to hinder the efficiency of c-Si cell.
View Article and Find Full Text PDFSilicon (Si) is a good photon absorption material for photoelectrochemical (PEC) conversion. Recently, the relatively low photovoltage of Si-based PEC anode is one of the most significant factors limiting its performance. To achieve a high photovoltage in PEC electrode, both a large barrier height and high-quality surface passivation of Si are indispensable.
View Article and Find Full Text PDFUnlabelled: Silicon-organic solar cells based on conjugated polymers such as poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (
Pedot: PSS) on n-type silicon (n-Si) attract wide interest because of their potential for cost-effectiveness and high-efficiency. However, a lower barrier height (Φb) and a shallow built in potential (Vbi) of Schottky junction between n-Si and
Pedot: PSS hinders the power conversion efficiency (PCE) in comparison with those of traditional p-n junction. Here, a strong inversion layer was formed on n-Si surface by inserting a layer of 1, 4, 5, 8, 9, 11-hexaazatriphenylene hexacarbonitrile (HAT-CN), resulting in a quasi p-n junction.
ACS Appl Mater Interfaces
November 2015
Graphene-based photodetectors have attracted wide interest due to their high-speed, wide-band photodetection and potential as highly energy-efficient integrated devices. However, the inherently low-absorption cross-section and nonselective spectra response hinder its utilization as a high-performance photodetector. Here, we report a solution-processed and high-spectral-selectivity photodetector based on a gold nanorods (Au NRs)-graphene heterojunction with near-infrared (NIR) detection.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2015
Silicon (Si) is an important material in photoelectrochemical (PEC) water splitting because of its good light-harvesting capability as well as excellent charge-transport properties. However, the shallow valence band edge of Si hinders its PEC performance for water oxidation. Generally, thanks to their deep valence band edge, metal oxides are incorporated with Si to improve the performance, but they also decrease the transportation of carriers in the electrode.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2014
Organic electronics have gained widespread attention due to their flexibility, lightness, and low-cost potential. It is attractive due to the possibility of large-scale roll-to-roll processing. However, organic electronics require additional development before they can be made commercially available and fully integrated into everyday life.
View Article and Find Full Text PDFAn in situ cross-linked three-dimensional polymer network has been developed to passivate ZnO nanoparticles as an electron transporting layer (ETL) to improve the performance of inverted organic solar cells. The passivated ZnO ETL-based devices achieve efficiencies of 3.26% for poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and 7.
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