A Nd:GdVO/GaAs passively Q-switched laser has been demonstrated based on a microchip design. Under high pump power, the high optical intensity inside the laser cavity triggered the two photon absorption of GaAs, and the pulse duration was shortened to sub-nanosecond level. The shortest pulse of 690 ps was obtained, which we believe is the shortest pulse ever generated with a pure GaAs saturable absorber.
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