Acceleration of radiative recombination for efficient perovskite LEDs.

The increasing demands for more efficient and brighter thin-film light-emitting diodes (LEDs) in flat-panel display and solid-state lighting applications have promoted research into three-dimensional (3D) perovskites. These materials exhibit high charge mobilities and low quantum efficiency droop, making them promising candidates for achieving efficient LEDs with enhanced brightness. To improve the efficiency of LEDs, it is crucial to minimize nonradiative recombination while promoting radiative recombination.

Selective Exposure of Robust Perovskite Layer of Aurivillius-Type Compounds for Stable Photocatalytic Overall Water Splitting.

Aurivillius-type compounds ((Bi O ) (A B O ) ) with alternately stacked layers of bismuth oxide (Bi O ) and perovskite (A B O ) are promising photocatalysts for overall water splitting due to their suitable band structures and adjustable layered characteristics. However, the self-reduction of Bi at the top (Bi O ) layers induced by photogenerated electrons during photocatalytic processes causes inactivation of the compounds as photocatalysts. Here, using Bi TiNbO as a model photocatalyst, its surface termination is modulated by acid etching, which well suppresses the self-corrosion phenomenon.

Interface-engineered ferroelectricity of epitaxial HfZrO thin films.

Ferroelectric hafnia-based thin films have attracted intense attention due to their compatibility with complementary metal-oxide-semiconductor technology. However, the ferroelectric orthorhombic phase is thermodynamically metastable. Various efforts have been made to stabilize the ferroelectric orthorhombic phase of hafnia-based films such as controlling the growth kinetics and mechanical confinement.

In-plane charged domain walls with memristive behaviour in a ferroelectric film.

Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications. The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices.

Surface Oxygen Vacancies Confined by Ferroelectric Polarization for Tunable CO Oxidation Kinetics.

Surface oxygen vacancies have been widely discussed to be crucial for tailoring the activity of various chemical reactions from CO, NO, to water oxidation by using oxide-supported catalysts. However, the real role and potential function of surface oxygen vacancies in the reaction remains unclear because of their very short lifetime. Here, it is reported that surface oxygen vacancies can be well confined electrostatically for a polarization screening near the perimeter interface between Pt {111} nanocrystals and the negative polar surface (001) of ferroelectric PbTiO Strikingly, such a catalyst demonstrates a tunable catalytic CO oxidation kinetics from 200 °C to near room temperature by increasing the O gas pressure, accompanied by the conversion curve from a hysteresis-free loop to one with hysteresis.

Electric field control of superconductivity at the LaAlO/KTaO(111) interface.

The oxide interface between LaAlO and KTaO(111) can harbor a superconducting state. We report that by applying a gate voltage ( ) across KTaO, the interface can be continuously tuned from superconducting into insulating states, yielding a dome-shaped - dependence, where is the transition temperature. The electric gating has only a minor effect on carrier density but a strong one on mobility.

Interface-engineered electron and hole tunneling.

Although the phenomenon of tunneling has been known since the advent of quantum mechanics, it continues to enrich our understanding of many fields of science. Commonly, this effect is described in terms of electrons traversing the potential barrier that exceeds their kinetic energy due to the wave nature of electrons. This picture of electron tunneling fails, however, for tunnel junctions, where the Fermi energy lies sufficiently close to the insulator valence band, in which case, hole tunneling dominates.

Two-Dimensional Superconductivity at the LaAlO_{3}/KTaO_{3}(110) Heterointerface.

We report on the observation of a T_{c}∼0.9  K superconductivity at the interface between LaAlO_{3} film and the 5d transition metal oxide KTaO_{3}(110) single crystal. The interface shows a large anisotropy of the upper critical field, and its superconducting transition is consistent with a Berezinskii-Kosterlitz-Thouless transition.

Overcoming the Limits of the Interfacial Dzyaloshinskii-Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures.

Topologically protected magnetic states have a variety of potential applications in future spintronics owing to their nanoscale size (<100 nm) and unique dynamics. These fascinating states, however, usually are located at the interfaces or surfaces of ultrathin systems due to the short interaction range of the Dzyaloshinskii-Moriya interaction (DMI). Here, magnetic topological states in a 40-unit cells (16 nm) SrRuO layer are successfully created via an interlayer exchange coupling mechanism and the interfacial DMI.

Electronic and nanostructure engineering of bifunctional MoS towards exceptional visible-light photocatalytic CO reduction and pollutant degradation.

With recently increasing environmental issues and foreseeable energy crisis, it is desirable to design cheap, efficient, and visible-light responsive nano-photocatalyst for CO conversion and pollutant degradation. Herein, we report a flower-like of MoS-based hybrid photocatalyst with high efficiency through nanostructure and electronic structure engineering. Nanostructure control is used to fabricate MoS in to flower-like nanosheets (NSs) with large surface active area.

Atomic-Scale Control of Magnetism at the Titanite-Manganite Interfaces.

Complex oxide thin-film heterostructures often exhibit magnetic properties different from those known for bulk constituents. This is due to the altered local structural and electronic environment at the interfaces, which affects the exchange coupling and magnetic ordering. The emergent magnetism at oxide interfaces can be controlled by ferroelectric polarization and has a strong effect on spin-dependent transport properties of oxide heterostructures, including magnetic and ferroelectric tunnel junctions.