Twist angle and electric gating controllable electronic structure of the two-dimensional stacked BP homo-structure.

The boron phosphide (BP) van der Waals (vdW) homostructure is designed to construct high-performance nano-optoelectronic devices due to its distinctive photoelectric properties. Using density functional theory, the electronic properties of twisted and untwisted BP bilayer structures are systematically calculated. We found that the 0° structure is a direct band gap semiconductor with a type II band alignment, the carrier mobility of which is increased to 10, and its photoelectric conversion efficiency is 17.

A type-II NGyne/GaSe heterostructure with high carrier mobility and tunable electronic properties for photovoltaic application.

The two-dimensional heterostructures with type-II band alignment and super-high carrier mobility offer an updated perspective for photovoltaic devices. Here, based on the first-principles calculation, a novel vertical NGyne/GaSe heterostructure with an intrinsic type-II band alignment, super-high carrier mobility (10cmVs), and strong visible to ultraviolet light absorption (10-10cm) is constructed. We investigate the electronic structure and the interfacial properties of the NGyne/GaSe heterostructure under electric field and strain.