Constructing tin oxides Interfacial Layer with Gradient Compositions for Efficient Perovskite/Silicon Tandem Solar Cells with Efficiency Exceeding 28.

Atomic layer deposition (ALD) growth of conformal thin SnO films on perovskite absorbers offers a promising method to improve carrier-selective contacts, enable sputter processing, and prevent humidity ingress toward high-performance tandem perovskite solar cells. However, the interaction between perovskite materials and reactive ALD precursor limits the process parameters of ALD-SnO film and requires an additional fullerene layer. Here, it demonstrates that reducing the water dose to deposit SnO can reduce the degradation effect upon the perovskite underlayer while increasing the water dose to promote the oxidization can improve the electrical properties.

Buried-Interface Engineering of Conformal 2D/3D Perovskite Heterojunction for Efficient Perovskite/Silicon Tandem Solar Cells on Industrially Textured Silicon.

Exploring strategies to control the crystallization and modulate interfacial properties for high-quality perovskite film on industry-relevant textured crystalline silicon solar cells is highly valued in the perovskite/silicon tandem photovoltaics community. The formation of a 2D/3D perovskite heterojunction is widely employed to passivate defects and suppress ion migration in the film surface of perovskite solar cells. However, realizing solution-processed heterostructures at the buried interface faces solvent incompatibilities with the challenge of underlying-layer disruption, and texture incompatibilities with the challenge of uneven coverage.

[Study of spectra characteristics of Ca3SiO5 : Eu2+ phosphor].

The Ca3SiO5 : Eu2+ phosphor was synthesized by the sol-gel reaction method. The emission spectrum was measured by a SPEX1404 spectrophotometer, and the excitation spectrum was measured by a SHIMADZU RF-540 ultraviolet spectrophotometer. All the characterization of the phosphors was conducted at room temperature.