Publications by authors named "Zhihu Xia"
Article Synopsis
- This study explores how altering the thickness of AlN nucleation layers affects the strain in GaN layers to produce longer-wavelength red InGaN mini-LEDs.
- By increasing the AlN thickness from 15 nm to 60 nm, the peak emission wavelength of the LEDs shifted from 633 nm to 656 nm, demonstrating potential for improved light emission.
- However, the research also found that while a thickness of 45 nm provided a good balance with an external quantum efficiency (EQE) of 8.5% and a wavelength of 649 nm, increasing thickness beyond this point significantly reduced EQE.
This work reports a high-performance InGaN-based red-emitting LED with a strain-release interlayer (SRI) consisting of an InGaN stress-release layer (SRL) and an AlN dislocation confinement layer (DCL) in unintentionally doped GaN (u-GaN). The SRL introduces a tensile strain which could decrease the in-plane compressive stress of the u-GaN layer, while the DCL could reduce the dislocation density and thus improve the crystal quality of the u-GaN layer. Consequently, a high-efficiency InGaN-based red-emitting LED with a peak wavelength of 651 nm and an external quantum efficiency of 6.
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