[Study on the Photoluminescence Properties of Tb Doped Si Nanowires].

Silicon nanowires with high density, uniform distribution and large area were produced directly from Si(100) based on solid-liquid-solid mechanism under the growth temperature of 1 100 ℃ with 30 min. The flow of N2 is 1 500 sccm and Au-Al films is used as metallic catalyst. The diameters of Si nanowires is 50~120 nm and the lengths of the formed Si nanowires is hundreds of nanometers.