Development of a cryogen-free sub-3 K low-temperature scanning probe microscope by remote liquefaction scheme.

We developed a new scheme for cryogen-free cooling down to sub-3 K temperature range and ultra-low vibration level. An ultra-high-vacuum cryogen-free scanning probe microscope (SPM) system was built based on the new scheme. Instead of mounting a below-decoupled cryocooler directly onto the system, the new design was realized by integrating a Gifford-McMahon cryocooler into a separate liquefying chamber, providing two-stage heat exchangers in a remote way.

High-performance infrared photodetectors based on InAs/InAsSb/AlAsSb superlattice for 3.5 µm cutoff wavelength spectra.

High-performance infrared p-i-n photodetectors based on InAs/InAsSb/AlAsSb superlattices on GaSb substrate have been demonstrated at 300K. These photodetectors exhibit 50% and 100% cut-off wavelength of ∼3.2 µm and ∼3.

High-Performance Anodic Vulcanization-Pretreated Gated P-π-M-N InAs/GaSb Superlattice Long-Wavelength Infrared Detector.

The InAs/GaSb superlattice infrared detector has been developed with tremendous effort. However, the performance of it, especially long-wavelength infrared detectors (LWIR), is still limited by the electrical performance and optical quantum efficiency (QE). Forcing the active region to be p-type through proper doping can highly improve QE, and the gating technique can be employed to greatly enhance electrical performance.

Anomalous circular photogalvanic effect in p-GaAs.

The anomalous circular photogalvanic effect (ACPGE) is observed in p-GaAs with a thickness of 2 μm at room temperature, in which circularly polarized light is used to inject spin-polarized carriers and the spin diffusion can generate a macroscopic detectable charge current due to the inverse spin Hall effect. The normalized ACPGE signals show first increasing and then decreasing with increasing the doping concentration. The role of the doping impurities is discussed by both extrinsic and intrinsic models, and both can well explain the variation of ACPGE with the doping concentration.

Measurement of the inhomogeneous broadening of a bi-exciton state in a quantum dot using Franson-type nonlocal interference.

The inhomogeneous broadening of the bi-exciton state in quantum dots, i.e., the inhomogeneous broadening of the upper level of the cascade process, is not only a fundamental problem in quantum dots, but also closely related with the coherent control of this complex system and the quality of the entangled photon pairs, especially the time-bin entangled photon pairs.

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors.

Single self-assembled InAs/GaAs quantum dots in photonic nanostructures: The role of nanofabrication.

Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also have an adverse influence, through the creation of traps and surface states that could induce blinking, spectral diffusion, and dephasing.

Structural discontinuity induced surface second harmonic generation in single, thin zinc-blende GaAs nanowires.

We investigate optical second harmonic generation (SHG) from individual self-catalyzed zinc-blende (ZB) GaAs nanowires (NWs), where the polarimetry strongly depends on the NW diameter. We report a direct observation on the SHG induced by surface nonlinear susceptibilities in a single, ultra-thin GaAs NW. By considering the contributions from both optical field and structural discontinuities in our theoretical model, we can well explain the optical SHG polarimetry from NWs with different diameters.

Precise characterization of self-catalyzed III-V nanowire heterostructures via optical second harmonic generation.

We demonstrate the utility of optical second harmonic generation (SHG) polarimetry to perform structural characterization of self-assembled zinc-blende/wurtzite III-V nanowire heterostructures. By analyzing four anisotropic SHG polarimetric patterns, we distinguish between wurtzite (WZ), zinc-blende (ZB) and ZB/WZ mixing III-V semiconducting crystal structures in nanowire systems. By neglecting the surface contributions and treating the bulk crystal within the quasi-static approximation, we can well explain the optical SHG polarimetry from the NWs with diameter from 200-600 nm.

Bright Single-Photon Source at 1.3 μm Based on InAs Bilayer Quantum Dot in Micropillar.

A pronounced high count rate of single-photon emission at the wavelength of 1.3 μm that is capable of fiber-based quantum communication from InAs/GaAs bilayer quantum dots coupled with a micropillar (diameter ~3 μm) cavity of distributed Bragg reflectors was investigated, whose photon extraction efficiency has achieved 3.3%.

High-efficiency broadband second harmonic generation in single hexagonal GaAs nanowire.

In this paper, we investigate second harmonic generation in a single hexagonal GaAs nanowire. An excellent frequency converter based on this nanowire excited using a femtosecond laser is demonstrated to operate over a range from 730 nm to 1960 nm, which is wider than previously reported ranges for nanowires in the literature. The converter always operates with a high conversion efficiency of ~10 W which is ~10 times higher than that obtained from the surface of bulk GaAs.

Large optical Stark shifts in single quantum dots coupled to core-shell GaAs/AlGaAs nanowires.

Nanowire quantum dots (NW-QDs) can be used for future compact and efficient optoelectronic devices. Many efforts have been made to control the QD states by inserting the QDs in doped structures and applying an electric field in a nanowire system. In this paper, we use down-conversion and up-conversion photoluminescence excitations to explore the optical and electronic properties of single quantum dots in GaAs/AlGaAs core-shell nanowires.

Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots.

Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for ~1.3 μm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers.

Experimental Demonstration of a Hybrid-Quantum-Emitter Producing Individual Entangled Photon Pairs in the Telecom Band.

Quantum emitters generating individual entangled photon pairs (IEPP) have significant fundamental advantages over schemes that suffer from multiple photon emission, or schemes that require post-selection techniques or the use of photon-number discriminating detectors. Quantum dots embedded within nanowires (QD-NWs) represent one of the most promising candidate for quantum emitters that provide a high collection efficiency of photons. However, a quantum emitter that generates IEPP in the telecom band is still an issue demanding a prompt solution.

Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory.

Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan-Lukin-Cirac-Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate.

In situ probing and integration of single self-assembled quantum dots-in-nanowires for quantum photonics.

The realization of fiber-output single photon sources is necessary for quantum photonics. Here we present in situ probing and integration of single self-assembled quantum dots (QDs)-in-nanowires. Single self-assembled AlGaAs QDs were synthesized in GaAs/AlGaAs core-shell nanowires by molecular beam epitaxy and characterized by optical excitation in both micro-PL and fiber-integrating set-up.

Morphological engineering of self-assembled nanostructures at nanoscale on faceted GaAs nanowires by droplet epitaxy.

Fabrication of advanced artificial nanomaterials is a long-term pursuit to fulfill the promises of nanomaterials and it is of utter importance to manipulate materials at nanoscale to meet urgent demands of nanostructures with designed properties. Herein, we demonstrate the morphological tailoring of self-assembled nanostructures on faceted GaAs nanowires (NWs). The NWs are deposited on different kinds of substrates.

Self-assembled quantum dot structures in a hexagonal nanowire for quantum photonics.

Two types of quantum nanostructures based on self-assembled GaAs quantumdots embedded into GaAs/AlGaAs hexagonal nanowire systems are reported, opening a new avenue to the fabrication of highly efficient single-photon sources, as well as the design of novel quantum optics experiments and robust quantum optoelectronic devices operating at higher temperature, which are required for practical quantum photonics applications.

Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.

We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is ~20 times stronger than that from randomly distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.

In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.

A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer.

Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy.

We report a systematic optical spectroscopy study of low density InAs quantum clusters (QCs) grown by molecular beam epitaxy. The photoluminescence (PL) spectra show emission features of a wetting layer (WL) which contains hybridized quantum well states. The low-energy tail of the QCs' PL profile is actually an ensemble of some sharp lines, originating from the emission of different exciton states (e.