Publications by authors named "Zhi Ren Qiu"

MgZnO possesses a tunable bandgap and can be prepared at relatively low temperatures, making it suitable for developing optoelectronic devices. MgZnO (~0.1) films were grown on sapphire by metal-organic vapor phase epitaxy under different substrate-growth temperatures of 350-650 °C and studied by multiple characterization technologies like X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Raman scattering, extended X-ray absorption fine structure (EXAFS), and first-principle calculations.

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GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180-1500 nm.

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Raman spectra of three bulk 4H-SiC wafers with different free carrier concentration were measured at temperature from 80 K to 873 K. As temperature increases, Raman peaks of most optical phonon modes show monotonous down shift. An anomalous non-monotonous variation with temperature, was observed in the A(1) longitudinal optical (LO) mode from doped samples.

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Photoluminescence (PL) spectra were measured as a function of well width (LW) and temperature in ZnO/Mg0.1Zn0.9O single quantum wells (QWs) with graded thickness.

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We report dynamic regimes supported by a sharp quasi-one-dimensional (1D) ("razor"), pyramid-shaped ("dagger"), and conical ("needle") potentials in the 2D complex Ginzburg-Landau (CGL) equation with cubic-quintic nonlinearity. This is a model of an active optical medium with respective expanding antiwaveguiding structures. If the potentials are strong enough, they give rise to continuous generation of expanding soliton patterns by a 2D soliton initially placed at the center.

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Annularly and radially phase-modulated spatiotemporal necklace-shaped patterns (SNPs) in the complex Ginzburg-Landau (CGL) and complex Swift-Hohenberg (CSH) equations are theoretically studied. It is shown that the annularly phase-modulated SNPs, with a small initial radius of the necklace and modulation parameters, can evolve into stable fundamental or vortex solitons. To the radially phase-modulated SNPs, the modulated "beads" on the necklace rapidly vanish under strong dissipation in transmission, which may have potential application for optical switching in signal processing.

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Mono-, di-, and tetranuclear Ru(II) polypyridine complexes based on the bridging ligand pdtp, where pdtp is 3-(pyridin-2-yl)-as-triazino[5,6-f]1,10-phenanthroline, have been synthesized and characterizated. This asymmetric bridging ligand is composed of two nonequivalent coordinating sites: one involves the phenanthroline moiety, and the other one involves the pyridyltriazine moiety. Electrochemical data show that the first redox process in these complexes is pdtp based and the metal-metal interaction in di- and tetranuclear complexes is very weak.

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