SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network.

The SiC MOSFET with an integrated SBD (SBD-MOSFET) exhibits excellent performance in power electronics. However, the static and dynamic characteristics of this device are influenced by a multitude of parameters, and traditional TCAD simulation methods are often characterized by their complexity. Due to the increasing research on neural networks in recent years, such as the application of neural networks to the prediction of GaN JBS and Finfet devices, this paper considers the application of neural networks to the performance prediction of SiC MOSFET devices with an integrated SBD.

Paratesticular metastasis from colorectal adenocarcinoma presenting as hydrocele: a rare case report and literature review.

Colorectal cancer, with the liver being the most common site of distant metastasis, followed by the lungs and bones. Although reports of metastasis to the testis exist, paratesticular metastasis is extremely rare. A 37-year-old male presented with scrotal swelling.

Reply to the 'Comment on "A single level tunneling model for molecular junctions: evaluating the simulation methods"' by I Baldea, , 2024, , D2CP05110A (http://D2CP05110A).

We respond to the recent comment by Dr. Ion Bâldea concerning our work, "A single level tunneling model for molecular junctions: evaluating the simulation methods [E. M.

Unifying Fourteen Post-Hoc Attribution Methods With Taylor Interactions.

Various attribution methods have been developed to explain deep neural networks (DNNs) by inferring the attribution/importance/contribution score of each input variable to the final output. However, existing attribution methods are often built upon different heuristics. There remains a lack of a unified theoretical understanding of why these methods are effective and how they are related.

Generic dynamic molecular devices by quantitative non-steady-state proton/water-coupled electron transport kinetics.

Dynamic molecular devices operating with time- and history-dependent performance raised new challenges for the fundamental study of microscopic non-steady-state charge transport as well as functionalities that are not achievable by steady-state devices. In this study, we reported a generic dynamic mode of molecular devices by addressing the transient redox state of ubiquitous quinone molecules in the junction by proton/water transfer. The diffusion limited slow proton/water transfer-modulated fast electron transport, leading to a non-steady-state transport process, as manifested by the negative differential resistance, dynamic hysteresis, and memory-like behavior.

Terrace-confined guided growth of high-density ultrathin silicon nanowire array for large area electronics.

Ultrathin silicon nanowires (SiNWs) are ideal 1D channels to construct high performance nanoelectronics and sensors. We here report on a high-density catalytic growth of orderly ultrathin SiNWs, with diameter down toDnw=27±2nmand narrow NW-to-NW spacing of onlySnw ∼80 nm, without the use of high-resolution lithography. This has been accomplished via a terrace-confined strategy, where tiny indium (In) droplets move on sidewall terraces to absorb precoated amorphous Si layer as precursor and produce self-aligned SiNW array.