Catalyst-Free Growth of Two-Dimensional BCN Materials on Dielectrics by Temperature-Dependent Plasma-Enhanced Chemical Vapor Deposition.

Traditional methods to prepare two-dimensional (2D) B-C-N ternary materials (BCN), such as chemical vapor deposition (CVD), require sophisticated experimental conditions such as high temperature, delicate control of precursors, and postgrowth transfer from catalytic substrates, and the products are generally thick or bulky films without the atomically mixed phase of B-C-N, hampering practical applications of these materials. Here, for the first time, we develop a temperature-dependent plasma-enhanced chemical vapor deposition (PECVD) method to grow 2D BCN materials directly on noncatalytic dielectrics at low temperature with high controllability. The C, N, and B compositions can be tuned by simply changing the growth temperature.

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation.

Relatively low mobility and thermal conductance create challenges for application of tungsten diselenide (WSe) in high performance devices. Dielectric interface is of extremely importance for improving carrier transport and heat spreading in a semiconductor device. Here, by near-equilibrium plasma-enhanced chemical vapour deposition, we realize catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride (2D-BN) with domains around 20~ 200 nm directly on SiO/Si, quartz, sapphire, silicon or SiO/Si with three-dimensional patterns at 300 °C.

Direct growth of nanographene at low temperature from carbon black for highly sensitive temperature detectors.

Graphene has attracted tremendous research interest owing to its widespread potential applications. However, these applications are partially hampered by the lack of a general method to produce high-quality graphene at low cost. Here, to the best of our knowledge, we use low-cost solid carbon allotropes as the precursor in plasma-enhanced chemical vapor deposition (PECVD) for the first time, and find that the hydrogen plasma and reaction temperature play a crucial role in the process.

2-{(E)-[4-(Di-phenyl-amino)-phen-yl]imino-meth-yl}phenol.

The asymmetric unit of the title Schiff base molecule, C25H20N2O, contains two independent mol-ecules. In each mol-ecule, the C=N bond is in an E conformation. The most significant difference between the two mol-ecules is seen for the dihedral angles between the meth-oxy-substituted benzene ring and the two phenyl rings, which are 85.

2-((E)-{4-[Bis(4-eth-oxy-phen-yl)amino]-phen-yl}imino-meth-yl)phenol.

In the title Schiff base mol-ecule, C29H28N2O3, the three terminal benzene rings are twisted by 73.84 (15), 81.25 (16) and 12.