Publications by authors named "Zhenxin Yang"
Article Synopsis
- The study analyzed how ions move in p-type perovskite MAPbI films when an electric field is applied, highlighting the negative impact on device performance.
- It found that ion migration could seriously hinder the efficiency of MAPbI-based devices.
- To address this issue, the researchers suggested using additives to reduce ion migration, which could help create better-performing MAPbI-based devices.
As one of the most influential environmental factors, drought stress greatly impacts the development and production of plants. Triploid-induced Sims 'Mantianxing' is an important new cultivar for multi-resistance variety selective breeding, which is one of the breeding essential targets. However, the performance of triploid 'Mantianxing' under drought stress is unknown.
View Article and Find Full Text PDFArticle Synopsis
- Organic field-effect transistors (OFETs) are gaining popularity for detecting volatile organic compounds (VOCs) due to their ability to provide versatile, multiparameter measurements and signal amplification.
- However, false readings can undermine their effectiveness and lead to output errors during gas-sensing.
- This study clarifies how VOC adsorption affects OFET performance, highlighting the source-drain current as the key parameter for high responsivity and establishing guidelines for improved measurements in gas-sensing applications.
Article Synopsis
- A source-drain electrode using a MoO interfacial modification layer (IML) can improve organic thin-film transistors (OTFTs) but risks device instability due to MoO diffusion into organic materials.
- To mitigate this issue, a multilayered interface contact (MIC) design is proposed that includes an organic buffer layer (OBL) to prevent MoO diffusion while maintaining low contact resistance.
- The study analyzes the effects of various organic compounds as buffer layers and establishes key parameters, like the Fick coefficient, to guide future material selection for more stable OTFTs.
Bias-stress instability has been a challenging problem and a roadblock for developing stable p-type organic field-effect transistors (OFETs). This device instability is hypothesized because of electron-correlated charge carrier trapping, neutralization, and recombination at semiconductor/dielectric interfaces and in semiconductor channels. Here, in this paper, a strategy is demonstrated to improve the bias-stress stability by constructing a multilayered drain electrode with energy-level modification layers (ELMLs).
View Article and Find Full Text PDF