Synthesis of carbon nanowall by plasma-enhanced chemical vapor deposition method.

Plasma-enhanced chemical vapor deposition (PECVD) is widely used for the synthesis of carbon materials, such as diamond-like carbons (DLCs), carbon nanotubes (CNTs) and carbon nanowalls (CNWs). Advantages of PECVD are low synthesis temperature compared with thermal CVD and the ability to grow vertically, free-standing structures. Due to its self-supported property and high specific surface area, CNWs are a promising material for field emission devices and other chemical applications.

Resistive switching effect in titanium oxides.

Resistive switching (RS) phenomena have been vigorously investigated in a large variety of materials and highlighted for its preeminent potential for the future nonvolatile semiconductor memory applications or reconfigurable logic circuits. Among the various resistive switching materials, the binary metal oxides demonstrate more advantageous for micro- or nano-electronics applications due to their simpler fabrication process and compatibility with conventional CMOS technology, though the mechanisms are controversial due to the diversity of RS effects. This review mainly focuses on the current understanding of the microscopic nature of RS in titanium oxides, in which the working mechanisms can be categorized into thermochemical metallization mechanism, valence change mechanism, and electrostatic/electronic mechanism.