Rapid photonic curing effects of xenon flash lamp on ITO-Ag-ITO multilayer electrodes for high throughput transparent electronics.

High-throughput transparent and flexible electronics are essential technologies for next-generation displays, semiconductors, and wearable bio-medical applications. However, to manufacture a high-quality transparent and flexible electrode, conventional annealing processes generally require 5 min or more at a high temperature condition of 300 °C or higher. This high thermal budget condition is not only difficult to apply to general polymer-based flexible substrates, but also results in low-throughput.

A Study on Formation of Aluminum-Doped Zinc Oxide Films by Pulsed-Direct Current Sputtering for CIGS Solar Cells.

Considering the relationship between thin film thickness of transparent conductive oxide (TCO) materials and the reversed pulse time in pulsed-direct current (DC) sputtering, aluminum-doped zinc oxide (AZO) films were deposited on glass substrates at different reversed pulse times by changing oxygen/argon (O₂/Ar) gas ratios for window layers of large area CuInGaSe₂ (CIGS) solar cells. As a result of the reduced sputtering time, the thickness of AZO film was decreased when the reversed pulsed time was increased. The higher resistance and resistivity of the AZO film was obtained at a higher reversed pulse time.

Characteristics of the antibiotic resistance genes in the soil of medical waste disposal sites.

The inappropriate disposal of medical waste allows bacteria to acquire antibiotic resistance, which results in a threat to public health. Antibiotic resistance gene (ARG) profiles were determined for 45 different soil samples containing medical waste and 15 nearby soil samples as controls. Besides physical and chemical analyses (i.

Effects of Radio-Frequency Sputtering Power on Low Temperature Formation of MoS₂ Thin Films on Soda-Lime Glass Substrates.

For the realization of the economical and reliable fabrication process of molybdenum disulfide (MoS²) layers, MoS² thin films were directly formed a on soda-lime glass substrate by RF sputtering and subsequent rapid thermal annealing (RTA) at a temperature range of 400-550 °C. Using scanning electron microscopy and atomic force microscopy, it was possible to investigate more stable surface morphologies of MoS² layers at lower RF sputtering powers irrespective of the RTA temperature. Even at an RTA temperature of less than 550 °C, the Raman exhibited more distinct and peaks for the MoS² layers sputtered at lower RF powers.