Electrical Polarity Modulation in V-Doped Monolayer WS for Homogeneous CMOS Inverters.

As demand for higher integration density and smaller devices grows, silicon-based complementary metal-oxide-semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge.

An inorganic-blended p-type semiconductor with robust electrical and mechanical properties.

Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.

Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance.

High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g.

Van der Waals nanomesh electronics on arbitrary surfaces.

Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 °C, bringing greater integration freedoms for enhanced device functionality and broad applicability.

Contact Engineering of Halide Perovskites: Gold is Not Good Enough; Metalloid is Better.

The operation stability of halide perovskite devices is the critical issue that impedes their commercialization. The main reasons are that the ambient H O molecules can easily deteriorate the perovskites, while the metal electrodes react in different degrees with the perovskites. Herein, one kind of new electrode, the metalloids, is reported, which are much more stable than the conventional noble metals as electrical contacts for halide perovskites.

Electrically Switchable Polarization in Bi O Se Ferroelectric Semiconductors.

Atomically 2D layered ferroelectric semiconductors, in which the polarization switching process occurs within the channel material itself, offer a new material platform that can drive electronic components toward structural simplification and high-density integration. Here, a room-temperature 2D layered ferroelectric semiconductor, bismuth oxychalcogenides (Bi O Se), is investigated with a thickness down to 7.3 nm (≈12 layers) and piezoelectric coefficient (d ) of 4.

Au-Seeded CsPbI Nanowire Optoelectronics via Exothermic Nucleation.

Converting vapor precursors to solid nanostructures via a liquid noble-metal seed is a common vapor deposition principle. However, such a noble-metal-seeded process is excluded from the crystalline halide perovskite synthesis, mainly hindered by the growth mechanism shortness. Herein, powered by a spontaneous exothermic nucleation process (Δ < 0), the Au-seeded CsPbI nanowires (NWs) growth is realized based on a vapor-liquid-solid (VLS) growth mode.

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS Heterojunctions.

The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits.

Two-Step Chemical Vapor Deposition-Synthesized Lead-Free All-Inorganic CsSbBr Perovskite Microplates for Optoelectronic Applications.

Lead-based halide perovskites (APbX, where A = organic or inorganic cation, X = Cl, Br, I) are suitable materials for many optoelectronic devices due to their many attractive properties. However, the concern of lead toxicity and the poor ambient and operational stability of the organic cation group greatly limit their practical utilization. Therefore, there has recently been great interest in lead-free, environment-friendly all-inorganic halide perovskites (IHPs).

Self-Anti-Stacking 2D Metal Phosphide Loop-Sheet Heterostructures by Edge-Topological Regulation for Highly Efficient Water Oxidation.

2D metal phosphide loop-sheet heterostructures are controllably synthesized by edge-topological regulation, where Ni P nanosheets are edge-confined by the N-doped carbon loop, containing ultrafine NiFeP nanocrystals (denoted as NiFeP@NC/Ni P). This loop-sheet feature with lifted-edges prevents the stacking of nanosheets and induces accessible open channels for catalytic site exposure and gas bubble release. Importantly, these NiFeP@NC/Ni P hybrids exhibit a remarkable oxygen evolution activity with an overpotential of 223 mV at 20 mA cm and a Tafel slope of 46.

Perovskite Core-Shell Nanowire Transistors: Interfacial Transfer Doping and Surface Passivation.

While halide perovskite electronics are rapidly developing, they are greatly limited by the inferior charge transport and poor stability. In this work, effective surface charge transfer doping of vapor-liquid-solid (VLS)-grown single-crystalline cesium lead bromide perovskite (CsPbBr) nanowires (NWs) molybdenum trioxide (MoO) surface functionalization is achieved. Once fabricated into NW devices, due to the efficient interfacial charge transfer and reduced impurity scattering, a 15× increase in the field-effect hole mobility (μ) from 1.

Bication-Mediated Quasi-2D Halide Perovskites for High-Performance Flexible Photodetectors: From Ruddlesden-Popper Type to Dion-Jacobson Type.

Quasi-2D halide perovskites, especially the Ruddlesden-Popper perovskites (RPPs), have attracted great attention because of their promising properties for optoelectronics; however, there are still serious drawbacks, such as inefficient charge transport, poor stability, and unsatisfactory mechanical flexibility, restricting further utilization in advanced technologies. Herein, high-quality quasi-2D halide perovskite thin films are successfully synthesized with the introduction of the unique bication ethylenediammonium (EDA) via a one-step spin-coating method. This bication EDA, with short alkyl chain length, can not only substitute the typically bulky and weakly van der Waals-interacted organic bilayer spacer cations forming the novel Dion-Jacobson phase to enhance the mechanical flexibility of the quasi-2D perovskite (e.

Electric-field-driven non-volatile multi-state switching of individual skyrmions in a multiferroic heterostructure.

Electrical manipulation of skyrmions attracts considerable attention for its rich physics and promising applications. To date, such a manipulation is realized mainly via spin-polarized current based on spin-transfer torque or spin-orbital torque effect. However, this scheme is energy consuming and may produce massive Joule heating.

Bending Strain-Tailored Magnetic and Electronic Transport Properties of Reactively Sputtered γ'-FeN/Muscovite Epitaxial Heterostructures toward Flexible Spintronics.

The strain modulation on the magnetic and electronic transport properties of the ferromagnetic films is one of the hot topics due to the practical applications in flexible and wearable spintronic devices. However, the large strain-induced saturation magnetization and resistance change is not easy to achieve because most of the ferromagnetic films deposited on flexible substrates are polycrystalline or amorphous. Here, the flexible epitaxial γ'-FeN/mica films are fabricated by facing-target reactive sputtering.

Atomic origin of spin-valve magnetoresistance at the SrRuO grain boundary.

Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix. Hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides because of the complexity of defects and difficulties in characterization.