Hybrid graphene anti-resonant fiber with tunable light absorption.

Controlling the output light-intensity and realizing the light-switch function in hollow-core anti-resonant fibers (HC-ARFs) is crucial for their applications in polarizers, lasers, and sensor systems. Here, we theoretically propose a hybrid light-intensity-tunable HC-ARF deposited with the sandwiched graphene/hexagonal boron nitride/graphene based on the typical six-circular-tube and the nested structures. Changing the external drive voltage from 12.

GeO-doped ring-core photonic crystal fiber for supporting robust orbital angular momentum modes.

Orbital angular momentum (OAM)-mode-supported photonic crystal fibers (PCFs) have inspired intensive research in modern fiber optics due to the robust propagation and theoretically unlimited signal-carried channels. In this paper, a dual-cladding -doped ring-core PCF is designed, and a strategy for optimizing OAM mode properties is analyzed by structure parameters and -doping concentration. Numeric results show that high structural degrees of freedom are available to improve the effective refractive index separation (within the vector modes), chromatic dispersion, effective mode field area, nonlinear coefficient, and OAM mode purity in terms of inner cladding, outer cladding, and ring-core.

An Electrically Controlled Wavelength-Tunable Nanoribbon Laser.

Nanoscale laser sources with downscaled device footprint, high energy efficiency, and high operation speed are pivotal for a wide array of optoelectronic and nanophotonic applications ranging from on-chip interconnects, nanospectroscopy, and sensing to optical communication. The capability of on-demand lasing output with reversible and continuous wavelength tunability over a broad spectral range enables key functionalities in wavelength-division multiplexing and finely controlled light-matter interaction, which remains an important subject under intense research. In this study, we demonstrate an electrically controlled wavelength-tunable laser based on a CdS nanoribbon (NR) structure.

Phonon-Assisted Electro-Optical Switches and Logic Gates Based on Semiconductor Nanostructures.

High-performance nanostructured electro-optical switches and logic gates are highly desirable as essential building blocks in integrated photonics. In contrast to silicon-based optoelectronic devices, with their inherent indirect optical bandgap, weak light-modulation mechanism, and sophisticated device configuration, direct-bandgap-semiconductor nanostructures with attractive electro-optical properties are promising candidates for the construction of nanoscale optical switches for on-chip photonic integrations. However, previously reported semiconductor-nanostructure optical switches suffer from serious drawbacks such as high drive voltage, limited operation spectral range, and low modulation depth.

Semiconductor alloy nanoribbon lateral heterostructures for high-performance photodetectors.

High-performance visible-light photodetectors are achieved based on single nanoribbon lateral heterostructures composed of two different semiconductor alloys epitaxially grown in the lateral direction. They reveal superior spectral response range, responsivity, Ion/Ioff ratio, and external quantum efficiency, relative to devices based on single composition structures.

Room-temperature near-infrared photodetectors based on single heterojunction nanowires.

Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed.