Study on the proximity of QWI in InP-based AlGaInAs MQWs using the IFVD method and its application in single frequency teardrop laser diodes.

This paper presents our research on quantum well intermixing (QWI) of InP-based AlGaInAs/AlGaInAs multi-quantum wells using impurity-free vacancy-disordering (IFVD) and the QWI mask proximity effect and its application in the design and fabrication of a teardrop laser. Using a SiN film deposited by plasma-enhanced chemical vapor deposition (PECVD) as a QWI promoter mask and annealing under 700°C for 2 minutes, a 70 nm wavelength blue shift of a FP laser is achieved using InP-based AlGaInAs quantum well laser material. It is found that a 5 µm separation is needed between the QWI mask edges and the non-QWI area during the QWI process.