Temperature field analysis of TiO2 films with high-absorptance inclusions.

To deduce the location of absorptive inclusions in thin films, temperature distributions in pure TiO(2) films and TiO(2) films with high-absorptance inclusions are analyzed based on temperature field theory. According to our theoretic simulations, the surface temperature rise increases when absorptive inclusions are incorporated into thin films and shows different values for different inclusions. With the increase of inclusion thickness, the surface temperature rise varies and has a maximum value.

Temperature field analysis of single-layer TiO2 films.

A method is presented to evaluate optical absorption at a random wavelength by calculating temperature distribution in single-layer TiO(2) films. Temperature distribution in single-layer TiO(2) films was analyzed based on temperature field theory. Through our calculations, optical absorption variation was obtained to be similar to that of surface temperature rise in films.

Preparation of high laser induced damage threshold antireflection film using interrupted ion assisted deposition.

Single layers and antireflection films were deposited by electron beam evaporation, ion assisted deposition and interrupted ion assisted deposition, respectively. Antireflection film of quite high laser damage threshold (18J/cm2) deposited by interrupted ion assisted deposition were got. The electric field distribution, weak absorption, and residual stress of films and their relations to damage threshold were investigated.

Thermodynamic damage mechanism of transparent films caused by a low-power laser.

A new model for analyzing the laser-induced damage process is provided. In many damage pits, the melted residue can been found. This is evidence of the phase change of materials.