Publications by authors named "Zheng-Fa Hu"

Gallium and Indium co-substituted Yb, Er:YAG was fabricated through the chemical co-precipitation method. The formation process and structure of the Ga3+ and In3+ substituted phosphor powders were characterized by the X-ray diffraction, thermo-gravimetry analyzer, infrared spectra, and X-ray photoelectron spectroscopy, and the effects of Ga3+ and In3+ concentration on the luminescence properties were investigated by spectrum. The results showed that the blue shift occurred after the substitution of Ga3+ and In3+ for Al3+ in matrix, and the intensity of emission spectrum was affected by the concentration of Ga3+ and In3+.

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The Al doping gallate phosphor (Ga(1-x)Al(x))2O3 : Cr3+ (x = 0, 0.1, 0.2, 0.

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Long afterglow phosphors BaAl12 O19:Eu2+/Eu3+, Dy3+ were synthesized by high temperature solid state method under different atmosphere. X-ray powder diffraction (XRD) shows that pure BaAl12 O19 phase structure was obtained and the do ping ions Eu2+/Eu3+, Dy3+ didn't change the phase structure. By comparison, the authors found that the doping ions Eu2+/ Eu3+, Dy3+ caused the XRD diffraction peaks moving to the high angle slightly which displayed that the inter-planar spacing was changed via Eu and Dy replacing Ba lattice in BaAl12 O19.

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