Influence of growth interruption on the morphology and luminescence properties of AlGaN/GaN ultraviolet multi-quantum wells.

The influence of growth interruption on the surface and luminescence properties of AlGaN/GaN ultraviolet multi-quantum wells (UV MQWs) is investigated. It is found that when the well and barrier layers of MQW samples are continuously grown at the same temperature, they have lower edge dislocation density and flatter surface of MQWs compared to samples with interrupted well and barrier growth. Moreover, continuous growth of well and barrier layers is more conducive to improving the luminescence efficiency of MQWs.

Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes.

Temperature characteristics of near-UV laser diodes (LDs) with a lasing wavelength of 384 nm are investigated. The characteristic temperature of threshold current (T) of the UV LDs is low. Thus, the performance of the UV LDs under continuous wave (CW) operation is not as good as under pulsed operation especially at a high injection current.