An ultrafast bipolar flash memory for self-activated in-memory computing.

In-memory computing could enhance computing energy efficiency by directly implementing multiply accumulate (MAC) operations in a crossbar memory array with low energy consumption (around femtojoules for a single operation). However, a crossbar memory array cannot execute nonlinear activation; moreover, activation processes are power-intensive (around milliwatts), limiting the overall efficiency of in-memory computing. Here we develop an ultrafast bipolar flash memory to execute self-activated MAC operations.

An application-specific image processing array based on WSe transistors with electrically switchable logic functions.

With the rapid development of artificial intelligence, parallel image processing is becoming an increasingly important ability of computing hardware. To meet the requirements of various image processing tasks, the basic pixel processing unit contains multiple functional logic gates and a multiplexer, which leads to notable circuit redundancy. The pixel processing unit retains a large optimizing space to solve the area redundancy issues in parallel computing.

Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly.

Multibridge channel field-effect transistors (MBCFETs) enable improved gate control and flow of a large drive current and they are regarded as promising candidates for next-generation transistor architecture. However, in achieving a larger drive current with a thinner channel, limitations arise from the decrease in mobility when the thickness of the Si nanosheet is less than 5 nm. In addition, an increase in the leakage current is unavoidable when a large number of channels are stacked.

A Steep-Slope MoS/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current.

In the continuous transistor feature size scaling down, the scaling of the supply voltage is stagnant because of the subthreshold swing (SS) limit. A transistor with a new mechanism is needed to break through the thermionic limit of SS and hold the large drive current at the same time. Here, by adopting the recently proposed Dirac-source field-effect transistor (DSFET) technology, we experimentally demonstrate a MoS/graphene (1.

[Investigation on awareness rates of malaria prevention knowledge among residents and students in Huai'an District, Huai'an City].

Objective: To understand the awareness status on malaria control knowledge of residents, primary and middle school students in Huai'an District, Huai'an City, so as to provide the evidences for promoting the malaria elimination process in this district.

Methods: Three towns in Huai'an District were selected randomly, and one village, one primary school and one junior middle school in each town were chosen as the investigation sites. The residents over 18 years old, the primary school students in Grade 4 to 6, and the junior middle students in the investigation sites were investigated by questionnaires to understand their awareness status on knowledge of malaria control.

[Surveillance of malaria in Huai'an District, Huai'an City, 2009-2013].

Objective: To analyze the results of malaria surveillance in Huai' an District in the recent 5 years, so as to provide the evidences for the establishment of suitable control strategy in the district.

Methods: The febrile patients among permanent and floating populations in Huai'an District from 2009 to 2013 were examined by immunity and etiology methods and the mosquito vector in this district were investigated. Results In recent 5 years, a total of 48,203 person-times among permanent population were examined, and no positives ones were found, and totally 360 person-times among floating population were examined, and 53 cases of malaria were detected, including 2 vivax malaria cases, 48 falciparum malaria cases and 2 undifferentiated cases, and the positive rate of the floating population was 14.