Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications.

Transition metal dichalcogenides (TMDs) are a promising class of layered materials in the post-graphene era, with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior. Binary MX layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties, providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs. The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable (opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts (0-100%).

Ultranarrow-bandwidth planar hot electron photodetector based on coupled dual Tamm plasmons.

Hot electron photodetectors based on a planar structure of metal-insulator /semiconductor-metal (MIM/MSM) have attracted much attention due to the easy and cheap fabrication process and the possibility of detecting light with energy lower than the semiconductor band gap. For this type of device, however, hot electron photocurrent is restricted by the trade-off between the light absorption and the internal quantum efficiency (IQE) since high absorption usually occurs within thick metals and the IQE in this case is usually low. The trade-off is circumvented in this paper by proposing a new type of hot electron photodetector based on planar MIM structure and coupled dual Tamm plasmons (TPs), which has a structure of one-dimensional photonic crystals (1DPCs)/Au/TiO/Au/1DPCs.