Improved Performance of NbO Resistive Switching Memory by In-Situ N Doping.

Valence change memory (VCM) attracts numerous attention in memory applications, due to its high stability and low energy consumption. However, owing to the low on/off ratio of VCM, increasing the difficulty of information identification hinders the development of memory applications. We prepared N-doped NbO:N films (thickness = approximately 15 nm) by pulsed laser deposition at 200 °C.

Effect of Zr Doping on the Magnetic and Phase Transition Properties of VO₂ Powder.

In this work, VZrO₂ powder (x = 0, 0.01, 0.02, 0.

Ferromagnetic Properties of N-Doped and Undoped TiO₂ Rutile Single-Crystal Wafers with Addition of Tungsten Trioxide.

In this work, undoped, N-doped, WO₃-loaded undoped, and WO₃-loaded with N-doped TiO₂ rutile single-crystal wafers were fabricated by direct current (DC) magnetron sputtering. N-doping into TiO₂ and WO₃ loading onto TiO₂ surface were used to increase and decrease oxygen vacancies. Various measurements were conducted to analyze the structural and magnetic properties of the samples.