The Investigation of Hybrid PEDOT:PSS/β-GaO Deep Ultraviolet Schottky Barrier Photodetectors.

In this paper, the hybrid β-GaO Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-GaO interface.

High-Voltage β-GaO Schottky Diode with Argon-Implanted Edge Termination.

The edge-terminated Au/Ni/β-GaO Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts. With the implantation energy of 50 keV and dose of 5 × 10 cm and 1 × 10 cm, the reverse breakdown voltage increases from 209 to 252 and 451 V (the maximum up to 550 V) and the Baliga figure-of-merit (V/R) also increases from 25.7 to 30.

Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-GaO Thin Film.

We studied the reverse current emission mechanism of the Mo/β-GaO Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field indicates that the Schottky emission is the dominant carrier transport mechanism under reverse bias rather than the Frenkel-Poole trap-assisted emission model. Moreover, a breakdown voltage of 300 V was obtained in Fluorinert ambient with an average electric field of 3 MV/cm in Mo/β-GaO Schottky barrier diode.