Advanced doped-silicon-layer-based passivating contacts have boosted the power conversion efficiency (PCE) of single-junction crystalline silicon (c-Si) solar cells to over 26%. However, the inevitable parasitic light absorption of the doped silicon layers impedes further PCE improvement. To this end, alternative passivating contacts based on wide-bandgap metal compounds (so-called dopant-free passivating contacts (DFPCs)) have attracted great attention, thanks to their potential merits in terms of parasitic absorption loss, ease-of-deposition, and cost.
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