Exposure to heavy metal elements may significantly increase serum prostate-specific antigen levels with overdosed dietary zinc.

Background: Serum prostate-specific antigen (PSA) is a primary metric for diagnosis and prognosis of prostate cancer (PCa). Exposure to heavy metals, such as lead, cadmium, mercury, and zinc can impact PSA levels in PCa patients. However, it is unclear whether this effect also occurs in men without PCa, which may lead to the overdiagnosis of PCa.

Simple way to fabricate orderly arranged nanostructure arrays on diamond utilizing metal dewetting effect.

We introduce a simple method with thermal annealing round gold disk for agglomeration to fabricate orderly arranged nanostructure arrays on diamond for single photon source applications. In the annealing process, the dependence of gold sphere size on disk thickness and diameter was investigated, showing that gold sphere diameter was decreased with decreasing gold disk thickness or diameter. The condition parameters of ICP etch were adjusted to obtain different nanostructure morphologies on diamond.

Association of Total Dietary Intake of Sugars with Prostate-Specific Antigen (PSA) Concentrations: Evidence from the National Health and Nutrition Examination Survey (NHANES), 2003-2010.

Background: There is increasing evidence that dietary intake of sugars may be a risk factor for prostate cancer (PCa) and elevate the concentration of serum prostate-specific antigen (PSA). However, there is limited evidence of the correlation between total dietary intake of sugars and serum PSA concentrations for adult American males. Herein, we evaluated the association between total dietary intake of sugars and serum PSA concentrations in men without a malignant tumor diagnosis in the United States (US) National Health and Nutrition Examination Survey (NHANES) database.

Visible-Light Activation of Photocatalytic for Reduction of Nitrogen to Ammonia by Introducing Impurity Defect Levels into Nanocrystalline Diamond.

Nitrogen impurity has been introduced in diamond film to produce a nitrogen vacancy center (NV center) toward the solvated electron-initiated reduction of N to NH in liquids, giving rise to extend the wavelength region beyond the diamond's band. Scanning electron microscopy and X-ray diffraction demonstrate the formation of the nanocrystalline nitrogen-doped diamond with an average diameter of ten nanometers. Raman spectroscopy and PhotoLuminescence (PL) spectrum show characteristics of the NV and NV charge states.

Dietary phosphorus intake and serum prostate-specific antigen in non-prostate cancer American adults: A secondary analysis of the National Health and Nutrition Examination Survey (NHANES), 2003-2010.

Background And Objectives: Previous study has reported phosphorus intake is associated prostate cancer (PCa), but the association between phosphorus intake and serum prostate specific antigen (PSA) levels hasn't been reported in non-history of PCa population. Therefore, we performed a secondary data analysis based on existing data from the public Nutrition Examination Survey (NHANES) (2003-2010) database.

Methods And Study Design: Totally 6403 participants were selected from NHANES (2003-2010) database.

Fabrication of Diamond Submicron Lenses and Cylinders by ICP Etching Technique with SiO Balls Mask.

Submicron lenses and cylinders exhibiting excellent properties in photodetector and quantum applications have been fabricated on a diamond surface by an inductively-coupled plasma (ICP) etching technique. During ICP etching, a layer containing 500 nm diameter balls of SiO was employed as mask. By changing the mixing ratio of O, Ar and CF during ICP etching, several submicron structures were fabricated, such as cylinders and lenses.

Hydrogen-terminated diamond field-effect transistor with AlO dielectric layer formed by autoxidation.

Fabrication of hydrogen-terminated diamond (H-diamond) field-effect transistor (FET) with AlO dielectric layer has been successfully carried out. The AlO layer was formed by auto-oxidizing 6 nm Al film in the air at room temperature, and a FET without AlO dielectric layer has also been fabricated for comparison. For both FETs, 100 nm Al layers were deposited as the gate electrodes, respectively.

Fabrication of capacitive pressure sensor using single crystal diamond cantilever beam.

Fabrication of single crystal diamond capacitive pressure sensor is presented. Firstly, the single crystal diamond cantilever beam was formed on HPHT diamond substrate by using selective high-energy ion implantation, metal patterning, ICP etching and electrochemical etching techniques. Secondly, on this diamond cantilever beam, the desired electrode patterns were processed with photolithography and metal evaporation methods.

Responsivity improvement of Ti-diamond-Ti structured UV photodetector through photocurrent gain.

In this study, a Ti-diamond-Ti structured ultraviolet photodetector was fabricated on a homoepitaxial diamond layer with an oxygen-terminated surface. The properties of the Ti/diamond schottky contact were measured using X-ray photoelectron spectroscopy, and the barrier height was found to be 1.15 eV.

Fabrication of monolithic diamond photodetector with microlenses.

A monolithic diamond photodetector with microlenses is fabricated by etching microlens arrays (MLAs) on single crystal diamond surface and patterning tungsten electrode strips on the edge of these arrays. Firstly, compact MLAs are etched on half of diamond sample surface by thermal reflow method. Secondly, via magnetron sputtering technique, two sets of interdigitated tungsten electrodes are patterned on the sample surface, one set is on the edge of MLAs, the other set is on the planar area.

Fabrication of UV Photodetector on TiO2/Diamond Film.

The properties of ultraviolet (UV) photodetector fabricated on TiO2/diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-temperature Ib-type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO2 film was prepared directly using radio frequency magnetron sputtering technique in Ar and O2 mixing atmosphere. Tungsten was used as electrode material to fabricate metal-semiconductor-metal UV photodetector.