Publications by authors named "Zexiang Hu"
Nat Nanotechnol
February 2019
Article Synopsis
- - Antiferromagnetic (AFM) devices show promise for fast switching and resistance to magnetic fields, with examples including low-temperature AFM spin-valves and room-temperature AFM memory using unique heating or torque methods for writing data.
- - The research combines piezoelectric materials with high-Néel-temperature antiferromagnet MnPt to create a memory system that exhibits non-volatile resistance states stable under strong magnetic fields, remaining unaffected by these fields during switching.
- - This innovative piezoelectric, strain-controlled AFM memory has potential applications for low-energy, high-density memory, achieving a tunneling anisotropic magnetoresistance of about 11.2% at room temperature.
