Optimization of Subthreshold Swing and Hysteresis in HfZrO-Based MoS Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching.

Negative capacitance field effect transistors made of HfZrO (HZO) are one of the most promising candidates for low-power-density devices because of the extremely steep subthreshold swing and high open-state currents resulting from the addition of ferroelectric materials in the gate dielectric layer. In this paper, HZO thin films were prepared by magnetron sputtering combined with rapid thermal annealing. Their ferroelectric properties were adjusted by changing the annealing temperature and the thickness of HZO.