The Third Dimension of Ferroelectric Domain Walls.

Ferroelectric domain walls are quasi-2D systems that show great promise for the development of nonvolatile memory, memristor technology, and electronic components with ultrasmall feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive states, controlling the electrical current. Being embedded in a 3D material, however, the domain walls are not perfectly flat and can form networks, which leads to complex physical structures.

Charged Ferroelectric Domain Walls for Deterministic ac Signal Control at the Nanoscale.

The direct current (dc) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual dc conduction ranging from insulating to metallic-like, which is leveraged in domain-wall-based memory, multilevel data storage, and synaptic devices. In contrast to the functional dc behaviors at charged walls, their response to alternating currents (ac) remains to be resolved.

Observation of Electric-Field-Induced Structural Dislocations in a Ferroelectric Oxide.

Dislocations are 1D topological defects with emergent electronic properties. Their low dimensionality and unique properties make them excellent candidates for innovative device concepts, ranging from dislocation-based neuromorphic memory to light emission from diodes. To date, dislocations are created in materials during synthesis via strain fields or flash sintering or retrospectively via deformation, for example, (nano)-indentation, limiting the technological possibilities.

Publisher Correction: Conductivity control via minimally invasive anti-Frenkel defects in a functional oxide.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Conductivity control via minimally invasive anti-Frenkel defects in a functional oxide.

Utilizing quantum effects in complex oxides, such as magnetism, multiferroicity and superconductivity, requires atomic-level control of the material's structure and composition. In contrast, the continuous conductivity changes that enable artificial oxide-based synapses and multiconfigurational devices are driven by redox reactions and domain reconfigurations, which entail long-range ionic migration and changes in stoichiometry or structure. Although both concepts hold great technological potential, combined applications seem difficult due to the mutually exclusive requirements.

Observation of Uncompensated Bound Charges at Improper Ferroelectric Domain Walls.

Low-temperature electrostatic force microscopy (EFM) is used to probe unconventional domain walls in the improper ferroelectric semiconductor ErCaMnO down to cryogenic temperatures. The low-temperature EFM maps reveal pronounced electric far fields generated by partially uncompensated domain-wall bound charges. Positively and negatively charged walls display qualitatively different fields as a function of temperature, which we explain based on different screening mechanisms and the corresponding relaxation time of the mobile carriers.

Electrical half-wave rectification at ferroelectric domain walls.

Domain walls in ferroelectric semiconductors show promise as multifunctional two-dimensional elements for next-generation nanotechnology. Electric fields, for example, can control the direct-current resistance and reversibly switch between insulating and conductive domain-wall states, enabling elementary electronic devices such as gates and transistors. To facilitate electrical signal processing and transformation at the domain-wall level, however, an expansion into the realm of alternating-current technology is required.

Probing carrier lifetimes in photovoltaic materials using subsurface two-photon microscopy.

Accurately measuring the bulk minority carrier lifetime is one of the greatest challenges in evaluating photoactive materials used in photovoltaic cells. One-photon time-resolved photoluminescence decay measurements are commonly used to measure lifetimes of direct bandgap materials. However, because the incident photons have energies higher than the bandgap of the semiconductor, most carriers are generated close to the surface, where surface defects cause inaccurate lifetime measurements.

Direct measurement of absorption-induced wavefront distortion in high optical power systems.

Wavefront distortion due to absorption in the substrates and coatings of mirrors in advanced gravitational wave interferometers has the potential to compromise the operation and sensitivity of these interferometers [Opt. Lett.29, 2635-2637 (2004)].

Rayleigh scattering, absorption, and birefringence of large-size bulk single-crystal sapphire.

While the thermomechanical properties of sapphire make it an excellent candidate of test mass for advanced laser interferometers, its optical quality is not well understood or well controlled. We have studied the results from high-resolution measurements of scattering, absorption, and birefringence in test-mass samples to better understand issues of quality. Samples show large-scale scattering structures clearly linked to the crystal-growth process.