Widely applicable phosphomolybdic acid doped poly(9-vinylcarbazole) hole transport layer for perovskite light-emitting devices.

In this paper, a cross-linked poly(9-vinylcarbazole) (PVK):phosphomolybdic acid (PMA) layer is used as the hole transport layer in perovskite light-emitting devices, and the morphology, crystal structure, and photophysical properties of perovskite films on the PVK:PMA layer are studied. The addition of PMA into the PVK layer improves the perovskite morphology integrity and promotes hole transport. As a result, perovskite light-emitting devices using a PVK:PMA hole transport layer exhibit an improved maximum luminous efficiency of 22.

Enhancing the performance of perovskite light-emitting devices through 1,3,5-tris(2--phenylbenzimidazolyl)benzene interlayer incorporation.

Interface engineering is important for enhancing the luminance efficiency and stability of perovskite light-emitting devices. In this work, we study the effects of spin-coated 1,3,5-tris(2--phenylbenzimidazolyl)benzene (TPBi) layer incorporation on the crystal structure, morphology, photo-physics, and charge transport characteristics of the underlying MAPbBr layer. Introduction of such a TPBi interlayer effectively reduces defect density and increases radiative recombination in the MAPbBr layer.