Detection band expansion by independently tunable double resonances in a long-wavelength dual-color QWIP.

Multi-resonance light coupling management is a promising way to expand the operating spectral ranges of optoelectronic devices. The classical strategies are either lack of independent tunability for each resonance or involved with complex fabrication. Here, we propose a new scheme for expanding the operating spectral range of an optoelectronic device through a dual-color active material integrated with a simple resonant waveguide structure.

Carbon Nanotube Far Infrared Detectors with High Responsivity and Superior Polarization Selectivity Based on Engineered Optical Antennas.

Single-wall carbon nanotube (SWCNT) thin films are promising for sensitive uncooled infrared detection based on the photothermoelectric effect. The SWCNT film is usually shaped into a belt and diversely doped to form a p-n junction at the center. Under the illumination of a focused incident light, the temperature gradient from the junction to the contacts leads to photoresponse.

Dynamically tunable ultra-narrowband perfect absorbers for the visible-to-infrared range based on a microcavity integrated graphene pair.

Dynamically tunable ultra-narrowband perfect absorbers are important to next-generation active photonic devices. A composite structure of a graphene pair and a microcavity with Bragg mirrors are proposed for this purpose. Based on the electrically controllable doping of graphene and critical coupling of the incident light, the microcavity-graphene composite structure achieves peak absorptance higher than 99.

Absorption enhancement in all-semiconductor plasmonic cavity integrated THz quantum well infrared photodetectors.

The light coupling properties of all-semiconductor plasmonic cavity integrated THz quantum well infrared photodetectors were studied for absorption enhancement of the quantum wells. The all-semiconductor plasmonic cavity is constructed by heavily doped GaAs with a plasmonic behavior in the THz regime. The plasmonic behavior of GaAs was thoroughly studied by taking into account the carrier density dependent effective mass of electrons.

HgCdTe mid-Infrared photo response enhanced by monolithically integrated meta-lenses.

Polarization-independent dielectric meta-lens is proposed to monolithically integrate with a HgCdTe infrared photodetector to concentrate power flux into a reduced photosensitive area for performance enhancement. Although a reduction in photosensitive area could suppress the dark current, the more seriously reduced light absorptance would degrade the specific detectivity D. The integration of the meta-lens could reverse the situation by improving the absorptance of the photosensitive region.