Retina-Inspired X-Ray Optoelectronic Synapse Using Amorphous GaO Thin Film.

Machine vision techniques are widely applied for object identification in daily life and industrial production, where images are captured and processed by sensors, memories, and processing units sequentially. Neuromorphic optoelectronic synapses, as a preferable option to promote the efficiency of image recognition, are hotly pursued in non-ionizing radiation range, but rarely in ionizing radiation including X-rays. Here, the study proposes an X-ray optoelectronic synapse using amorphous GaO (a-GaO) thin film.

Border Trap-Enhanced GaO Nonvolatile Optoelectronic Memory.

Nonvolatile deep ultraviolet optoelectronic memory (DUVOEM) holds immense potential in cyberphysical systems, offering high storage density, swift conversion speeds, and robust data security. However, the current data retention time, typically limited to milliseconds or hours, mostly underperforms the expectations of years as a nonvolatile memory. In this work, we present a β-GaO/SiO/Si thin-film transistor DUVOEM with an enhanced data storage capability via trapping and releasing of photogenerated holes in border traps.

Amorphous Gallium Oxide-Based Crosstalk-Suppressing Solar-Blind Imaging Array Prepared by One-Step Method.

The solar-blind ultraviolet band presents a unique opportunity for low-background-noise detection due to limited atmospheric light transmission. Especially, with the ability to obtain size, shape and position information on the objects, the solar-blind image sensors are receiving increasing attention. However, because the inhibition of the crosstalk in crossbar arrays induces the complexity of the preparation process, rarely are applicable solar-blind UV imaging arrays reported.

Unraveling Thermal Transport Correlated with Atomistic Structures in Amorphous Gallium Oxide via Machine Learning Combined with Experiments.

Thermal transport properties of amorphous materials are crucial for their emerging applications in energy and electronic devices. However, understanding and controlling thermal transport in disordered materials remains an outstanding challenge, owing to the intrinsic limitations of computational techniques and the lack of physically intuitive descriptors for complex atomistic structures. Here, it is shown how combining machine-learning-based models and experimental observations can help to accurately describe realistic structures, thermal transport properties, and structure-property maps for disordered materials, which is illustrated by a practical application on gallium oxide.

Quasi-Epitaxial Growth of β-GaO-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors.

The epitaxial growth of technically important β-GaO semiconductor thin films has not been realized on flexible substrates due to the limitations of high-temperature crystallization conditions and lattice-matching requirements. We demonstrate the epitaxial growth of β-GaO(-201) thin films on flexible CeO(001)-buffered Hastelloy tape. The results indicate that CeO(001) has a small bi-axial lattice mismatch with β-GaO(-201), inducing simultaneous double-domain epitaxial growth.

Room-Temperature Ozone Sensing Capability of IGZO-Decorated Amorphous GaO Films.

In present work, we report a room-temperature ozone sensor using InGaZnO (IGZO)-decorated amorphous GaO (a-GaO) thin films. The gas sensing tests demonstrate that the topmost IGZO modification can significantly promote the sensors' responsivity. Intriguingly, the sensing capability presents a first increasing and then decreasing tendency as the surface morphology of IGZO develops from dispersed particles to a continuous film.

A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture.

We report a novel three-terminal device fabricated on MgZnO/ZnO/MgZnO triple-layer architecture. Because of the combined barrier modulation effect by both gate and drain biases, the device shows an unconventional I-V characteristics compared to a common field effect transistor. The photoresponse behavior of this unique device was also investigated and applied in constructing a new type ultraviolet (UV) photodetector, which may be potentially used as an active element in a UV imaging array.

Interface Engineering of High Efficiency Organic-Silicon Heterojunction Solar Cells.

Insufficient interface conformity is a challenge faced in hybrid organic-silicon heterojunction solar cells because of using conventional pyramid antireflection texturing provoking the porosity of interface. In this study, we tested alternative textures, in particular rounded pyramids and inverted pyramids to compare the performance. It was remarkably improved delivering 7.

Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components.

N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.

Maskless inverted pyramid texturization of silicon.

We discovered a technical solution of such outstanding importance that it can trigger new approaches in silicon wet etching processing and, in particular, photovoltaic cell manufacturing. The so called inverted pyramid arrays, outperforming conventional pyramid textures and black silicon because of their superior light-trapping and structure characteristics, can currently only be achieved using more complex techniques involving lithography, laser processing, etc. Importantly, our data demonstrate a feasibility of inverted pyramidal texturization of silicon by maskless Cu-nanoparticles assisted etching in Cu(NO3)2 / HF / H2O2 / H2O solutions and as such may have significant impacts on communities of fellow researchers and industrialists.

Probing defects in nitrogen-doped Cu2O.

Nitrogen doping is a promising method of engineering the electronic structure of a metal oxide to modify its optical and electrical properties; however, the doping effect strongly depends on the types of defects introduced. Herein, we report a comparative study of nitrogen-doping-induced defects in Cu2O. Even in the lightly doped samples, a considerable number of nitrogen interstitials (Ni) formed, accompanied by nitrogen substitutions (NO) and oxygen vacancies (VO).

Electrochemical performances and volume variation of nano-textured silicon thin films as anodes for lithium-ion batteries.

Electrochemical behaviors of nano-textured silicon thin film (NTSTF) coated with Al2O3 or Cu layers as anodes for lithium-ion batteries have been investigated. The cyclic performance of NTSTF electrodes is superior to dense Si thin films. The NTSTF with a 5 nm thick Cu coating layer shows superior cyclic performance and rate performance to other NTSTF samples.

Nanostructure formation and passivation of large-area black silicon for solar cell applications.

Nanoscale textured silicon and its passivation are explored by simple low-cost metal-assisted chemical etching and thermal oxidation, and large-area black silicon was fabricated both on single-crystalline Si and multicrystalline Si for solar cell applications. When the Si surface was etched by HF/AgNO(3) solution for 4 or 5 min, nanopores formed in the Si surface, 50-100 nm in diameter and 200-300 nm deep. The nanoscale textured silicon surface turns into an effective medium with a gradually varying refractive index, which leads to the low reflectivity and black appearance of the samples.

[Properties of the stimulated emission in the ZnO thin film].

ZnO thin film is a promising material for short-wave laser and LED etc, due to its high excition binding energy, intense stimulated emission, low lasing threshold, and high working temperature. ZnO thin films were prepared by laser molecular beam epitaxy (L-MBE) in our work. At room-temperature we reported the measurements of absorption spectra and emission spectra of ZnO thin films excited by various optical pumping intensities.