Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance.

In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap than Si, so a heterojunction with SiGe(source)/Si(channel) can result in a smaller tunneling distance, which is very helpful in boosting the tunneling rate. The gate dielectric near the drain region consists of low-k SiO to weaken the gate control of the channel-drain tunneling junction and reduce the ambipolar current (I).