Strong Vertical Piezoelectricity and Broad-pH-Value Photocatalyst in Ferroelastic YSeBrF Monolayer.

With the development of miniaturized devices, there is an increasing demand for 2D multifunctional materials. Six ferroelastic semiconductors, YSe (, = I, Br, Cl, or F; ≠ ) monolayers, are theoretically predicted here. Their in-plane anisotropic band structure, elastic and piezoelectric properties can be switched by ferroelastic strain.

Tunable Contacts of Bi O Se Nanosheets MSM Photodetectors by Metal-Assisted Transfer Approach for Self-Powered Near-Infrared Photodetection.

Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal-semiconductor contact is always independent on the work function, which challenges the next-generation optoelectronic devices. In this work, a metal-assisted transfer approach is developed to transfer Bi O Se nanosheets onto the pre-deposited metal electrodes, benefiting to the tunable metal-semiconductor contact. The success in Bi O Se nanosheets transfer is contributed to the stronger van der Waals adhesion of metal electrodes than that of growth substrates.

New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors.

Power consumption makes next-generation large-scale photodetection challenging. In this work, the source-gated transistor (SGT) is adopted first as a photodetector, demonstrating the expected low power consumption and high photodetection performance. The SGT is constructed by the functional sulfur-rich shelled GeS nanowire (NW) and low-function metal, displaying a low saturated voltage of 0.

Details of the topological state transition induced by gradually increased disorder in photonic Chern insulators.

Using two well-defined empirical parameters, we numerically investigate the details of the disorder-induced topological state transition (TST) in photonic Chern insulators composed of two-dimensional magnetic photonic crystals (MPCs). The TST undergoes a gradual process, accompanied with some interesting phenomena as the disorder of rod positions in MPCs increases gradually. This kind of TST is determined by the competition among the topologically protected edge state, disorder-induced wave localizations and bulk states in the system.