Non-relativistic torque and Edelstein effect in non-collinear magnets.

The Edelstein effect is the origin of the spin-orbit torque: a current-induced torque that is used for the electrical control of ferromagnetic and antiferromagnetic materials. This effect originates from the relativistic spin-orbit coupling, which necessitates utilizing materials with heavy elements. Here, we show that in magnetic materials with non-collinear magnetic order, the Edelstein effect and, consequently, a current-induced torque can exist even in the absence of the spin-orbit coupling.

Anisotropic magnetoresistance in altermagnetic MnTe.

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity.

Spontaneous Anomalous Hall Effect Arising from an Unconventional Compensated Magnetic Phase in a Semiconductor.

The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a noncollinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure.

Atomically sharp domain walls in an antiferromagnet.

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antiferromagnetic CuMnAs in which imaging by x-ray photoemission reveals the presence of magnetic textures down to nanoscale, reaching the detection limit of this established microscopy in antiferromagnets. We achieve atomic resolution by using differential phase-contrast imaging within aberration-corrected scanning transmission electron microscopy.

Unconventional Robust Spin-Transfer Torque in Noncollinear Antiferromagnetic Junctions.

Ferromagnetic spin valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we theoretically study here junctions built out of noncollinear antiferromagnets. We demonstrate a large and robust magnetoresistance and spin-transfer torque capable of ultrafast switching between parallel and antiparallel states of the junction.

Efficient Electrical Spin Splitter Based on Nonrelativistic Collinear Antiferromagnetism.

Spin-current generation by electrical means is among the core phenomena driving the field of spintronics. Using ab initio calculations we show that a room-temperature metallic collinear antiferromagnet RuO_{2} allows for highly efficient spin-current generation, arising from anisotropically spin-split bands with conserved up and down spins along the Néel vector axis. The zero net moment antiferromagnet acts as an electrical spin splitter with a 34° propagation angle between spin-up and spin-down currents.

Imaging and writing magnetic domains in the non-collinear antiferromagnet MnSn.

Non-collinear antiferromagnets are revealing many unexpected phenomena and they became crucial for the field of antiferromagnetic spintronics. To visualize and prepare a well-defined domain structure is of key importance. The spatial magnetic contrast, however, remains extraordinarily difficult to be observed experimentally.

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet.

Antiferromagnets are enriching spintronics research by many favorable properties that include insensitivity to magnetic fields, neuromorphic memory characteristics, and ultra-fast spin dynamics. Designing memory devices with electrical writing and reading is one of the central topics of antiferromagnetic spintronics. So far, such a combined functionality has been demonstrated via 90° reorientations of the Néel vector generated by the current-induced spin orbit torque and sensed by the linear-response anisotropic magnetoresistance.

Spin-Polarized Current in Noncollinear Antiferromagnets.

Noncollinear antiferromagnets, such as Mn_{3}Sn and Mn_{3}Ir, were recently shown to be analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show that these materials are similar to ferromagnets in another aspect: the charge current in these materials is spin polarized. In addition, we show that the same mechanism that leads to the spin-polarized current also leads to a transverse spin current, which has a distinct symmetry and origin from the conventional spin Hall effect.

Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films.

Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is observed which is antiparallel to the Fe magnetization. The staggered magnetization of the 5 nm thick CuMnAs layer is rotatable under small magnetic fields, due to the interlayer exchange coupling.

Electric Control of Dirac Quasiparticles by Spin-Orbit Torque in an Antiferromagnet.

Spin orbitronics and Dirac quasiparticles are two fields of condensed matter physics initiated independently about a decade ago. Here we predict that Dirac quasiparticles can be controlled by the spin-orbit torque reorientation of the Néel vector in an antiferromagnet. Using CuMnAs as an example, we formulate symmetry criteria allowing for the coexistence of topological Dirac quasiparticles and Néel spin-orbit torques.

Electrical switching of an antiferromagnet.

Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating current-induced internal fields whose sign alternates with the periodicity of the antiferromagnetic lattice. Using these fields, which couple strongly to the antiferromagnetic order, we demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 10(6) ampere per square centimeter.

Antiferromagnetic structure in tetragonal CuMnAs thin films.

Tetragonal CuMnAs is an antiferromagnetic material with favourable properties for applications in spintronics. Using a combination of neutron diffraction and x-ray magnetic linear dichroism, we determine the spin axis and magnetic structure in tetragonal CuMnAs, and reveal the presence of an interfacial uniaxial magnetic anisotropy. From the temperature-dependence of the neutron diffraction intensities, the Néel temperature is shown to be (480 ± 5) K.

Relativistic Néel-order fields induced by electrical current in antiferromagnets.

We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation.

Anisotropic magnetoresistance in an antiferromagnetic semiconductor.

Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental observation of the anisotropic magnetoresistance in an antiferromagnetic semiconductor Sr2IrO4. Based on ab initio calculations, we associate the origin of the phenomenon with large anisotropies in the relativistic electronic structure.

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs.

Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies.

The susceptibility of the poultry red mite, Dermanyssus gallinae (De Geer, 1778), to some acaricides under laboratory conditions.

Toxicity of 14 selected acaricides was tested for a laboratory strain of female D. gallinae. The most toxic were carbaryl (LC50 = 5.