Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying.

Properties of Ge oxides are significantly different from those of widely used Si oxides. For example, the instability of GeO at device junctions causes electronic defect levels that degrade the performance of Ge-containing devices (e.g.

Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C.

Low-temperature (LT) passivation methods (<450 °C) for decreasing defect densities in the material combination of silica (SiO) and silicon (Si) are relevant to develop diverse technologies (e.g., electronics, photonics, medicine), where defects of SiO/Si cause losses and malfunctions.

Crystalline and oxide phases revealed and formed on InSb(111)B.

Oxidation treatment creating a well-ordered crystalline structure has been shown to provide a major improvement for III-V semiconductor/oxide interfaces in electronics. We present this treatment's effects on InSb(111)B surface and its electronic properties with scanning tunneling microscopy and spectroscopy. Possibility to oxidize (111)B surface with parameters similar to the ones used for (100) surface is found, indicating a generality of the crystalline oxidation among different crystal planes, crucial for utilization in nanotechnology.