Graphene Quantum Dots Based on Mechanical Exfoliation Methods: A Simple and Eco-Friendly Technique.

Graphene quantum dots (GQDs) are very precious, widely used, and face significant challenges in preparation methods. In this study, three mechanical methods are investigated for the preparation of GQDs. All of these methods are green, cost-effective, and simple.

InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection.

Detection of short-wave infrared (SWIR) and mid-wave infrared (MWIR) emissions remains challenging despite their importance in many emerging applications, including night vision, space imaging and remote sensing. III-V compound semiconductor materials such as InAs have an ideal band gap covering a spectral regime from near-infrared (NIR), SWIR to MWIR. However, due to their high dark current, InAs photodetectors normally require a low-temperature operation, which has greatly limited their practical applications.

Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal-Organic Chemical Vapor Deposition.

The epitaxial growth of III-V nanowires with excellent optoelectronic properties on low-cost, light-weight, and flexible substrates is a key step for the design and engineering of future optoelectronic devices. In our study, GaAs nanowires were grown on synthetic mica, a two-dimensional layered material, via vapor-liquid-solid growth using metal-organic chemical vapor deposition. The effect of basic epitaxial growth parameters such as temperature and V/III ratio on the vertical yield of the nanowires is investigated.

Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications.

GaAs nanowires are regarded as promising building blocks of future optoelectronic devices. Despite progress, the growth of high optical quality GaAs nanowires is a standing challenge. Understanding the role of twin defects and nanowire facets on the optical emission and minority carrier lifetime of GaAs nanowires is key for the engineering of their optoelectronic properties.

Incidence rate of mycosis fungoides in Isfahan (Iran).

Mycosis fungoides (MF) is an extranodal non-Hodgkin's lymphoma with primary involvement of the skin. The aim of the present study was to determine the incidence rate of MF in Isfahan (Iran) and to compare the results with other reports. We collected our data from the MF clinic of Alzahra Hospital which is the main center for treatment of MF patients in Isfahan (2007-2008).