Spectral reflectance of core-shell GaN-(Al/Hf)O nanowires within adapted effective medium approximation.

Gallium nitride-based nanowires (NWs) overcome heteroepitaxy limits, enabling GaN-on-silicon devices, and offer high sensitivity for detection, sensing, and photocatalysis. Additional nanowire coating enhances their performance, protects against photoadsorption, and enables control over structural and optical properties. In this work, we investigate core-shell GaN-(Al/Hf)O nanowires, which meet the aforementioned expectations.

Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells.

Core-shell gallium nitride (GaN)-based nanowires offer noteworthy opportunities for innovation in high-frequency opto- and microelectronics. This work delves deeply into the physical properties of crystalline GaN nanowires with aluminum and hafnium oxide shells. Particular attention is paid to partial coverage of nanowires, resulting with exceptional properties.

Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers.

GaN nanowires grown on metal substrates have attracted increasing interest for a wide range of applications. Herein, we report GaN nanowires grown by plasma-assisted molecular beam epitaxy on thin polycrystalline ZrN buffer layers, sputtered onto Si(111) substrates. The nanowire orientation was studied by X-ray diffraction and scanning electron microscopy, and then described within a model as a function of the Ga beam angle, nanowire tilt angle, and substrate rotation.

Polarization Doping in a GaN-InN System-Ab Initio Simulation.

Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it could be obtained from a polarization difference and the concentration slope.

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects.

We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results indicate that different density and height of nanowires impact graphene properties such as roughness, strain, and carrier concentration as well as density and type of induced defects. Tracing the manifestation of those interactions is important for the application of novel heterostructures.