Unraveling the Mechanism of the 150-Fold Photocurrent Enhancement in Plasma-Treated 2D TMDs.

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are increasingly investigated for applications such as optoelectronic memories, artificial neurons, sensors, and others that require storing photogenerated signals for an extended period. In this work, we report an environment- and gate voltage-dependent photocurrent modulation method of TMD monolayer-based devices (WS and MoS). To achieve this, we introduce structural defects using mild argon-oxygen plasma treatment.