Selective area molecular beam epitaxy of InSb on InP(111)B: from thin films to quantum nanostructures.

InSb is a material of choice for infrared as well as spintronic devices but its integration on large lattice mismatched semi-insulating III-V substrates has so far altered its exceptional properties. Here, we investigate the direct growth of InSb on InP(111)B substrates with molecular beam epitaxial growth. Despite the lack of a thick metamorphic buffer layer for accommodation, we show that quasi-continuous thin films can be achieved using a very high Sb/In flux ratio.

InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy.

Increasing quantum confinement in semiconductor quantum dot (QD) systems is essential to perform robust simulations of many-body physics. By combining molecular beam epitaxy and lithographic techniques, we developed an approach consisting of a twofold selective area growth to build QD chains. Starting from 15 nm-thick and 65 nm-wide in-plane InGaAs nanowires on InP substrates, linear arrays of InGaAs QDs were grown on top, with tunable lengths and separations.

Electrical characterization of plate piezoelectric transducers bonded to a finite substrate.

This article presents a new technique for characterizing piezoelectric transducers attached to a finite substrate. It consists of determining the impedance of the transducer cleared of the effects caused by finite dimensions of the substrate. This technique is validated by comparison with measurements on a transducer mounted on an effectively half-infinite substrate.